Allicdata Part #: | IRFB3006GPBF-ND |
Manufacturer Part#: |
IRFB3006GPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 195A TO220AB |
More Detail: | N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-... |
DataSheet: | IRFB3006GPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8970pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 170A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRFB3006GPBF is an insulated-gate field-effect transistor (IGFET), or simply a field-effect transistor (FET). It is a type of single junction field-effect transistor which utilizes insulated-gate electrodes and operates on the principle of electrostatic amplified current control. The current flow through the source–drain path is controlled by the gate. As opposed to the bipolar junction transistor, the IGFET does not require a current flow between the source and the gate terminal to switch on current conduction. The field-effect transistor uses capacitance to control the gate voltage and hence, the current conducted.
The IRFB3006GPBF is a N-channel enhancement-mode field-effect transistor constructed with a planar gate and drain structure. The drain and source are connected externally and monitored by a gate electrode. The gate electrode is insulated from the rest of the device except for a small window which has a thin gate oxide. The drain is connected to an external voltage, and the source is connected to ground. The gate electrode modulates the amount of current that can flow through the device by creating an electrostatic field between the drain and the source. This device is normally used in medium- and high-voltage applications.
The IRFB3006GPBF is designed primarily for high-voltage use and hence, it has a wide range of operating voltages. It is rated to operate at high current and power levels in a temperature range of -55 to 150 °C. Its most common application is as an amplifier or switch in power supplies, computer and automotive audio systems, and motor control circuits. The device has a low on-state resistance and a fast switching speed, which allows it to be used for a wide range of switching applications.
In terms of operation, the IRFB3006GPBF is an ‘enhancement-mode’ device, which means that the source forms an ohmic contact to the drain when the gate electrode is reverse-biased. This external bias voltage must be greater than a certain ‘threshold’ voltage for conduction to occur. This bias voltage is the parameter that controls the amount of current conducted. As the external bias voltage increases, the amount of current that can flow through the device increases exponentially.
The IRFB3006GPBF is designed to provide a low-cost, integrated solution for high-speed, high-power, high-voltage applications. It is capable of controlling both voltage and current simultaneously and is suitable for a wide variety of automotive, computer, industrial, and consumer applications. The device is highly reliable, robust, and cost-effective, and is ideal for applications that require high speed and low voltage. The device can be used in a wide range of applications including power supplies, motor control circuits, and audio systems.
Overall, the IRFB3006GPBF is an enhanced-mode insulated-gate field-effect transistor (IGFET) and is suitable for applications that require high speed, low voltage, and high power. The device is capable of controlling both voltage and current simultaneously, making it suitable for a wide variety of automotive, computer, industrial, and consumer applications. This device is designed to provide a low-cost, integrated solution that is highly reliable, robust, and cost-effective.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRFB4233PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 230V 56A TO-2... |
IRFB5615PBF | Infineon Tec... | -- | 11000 | MOSFET N-CH 150V 35A TO-2... |
IRFBC40PBF | Vishay Silic... | -- | 2419 | MOSFET N-CH 600V 6.2A TO-... |
IRFB31N20DPBF | Infineon Tec... | -- | 964 | MOSFET N-CH 200V 31A TO-2... |
IRFB41N15DPBF | Infineon Tec... | 1.86 $ | 141 | MOSFET N-CH 150V 41A TO-2... |
IRFBF20LPBF | Vishay Silic... | 1.98 $ | 3042 | MOSFET N-CH 900V 1.7A TO-... |
IRFB3206GPBF | Infineon Tec... | -- | 65 | MOSFET N-CH 60V 120A TO22... |
IRFB3207PBF | Infineon Tec... | -- | 418 | MOSFET N-CH 75V 180A TO-2... |
IRFBA1405PPBF | Infineon Tec... | -- | 58 | MOSFET N-CH 55V 174A SUPE... |
IRFB52N15DPBF | Infineon Tec... | -- | 837 | MOSFET N-CH 150V 51A TO-2... |
IRFB4510PBF | Infineon Tec... | -- | 963 | MOSFET N CH 100V 62A TO22... |
IRFB7446PBF | Infineon Tec... | -- | 4000 | MOSFET N-CH 40V 120A TO22... |
IRFBE20PBF | Vishay Silic... | -- | 387 | MOSFET N-CH 800V 1.8A TO-... |
IRFBC30PBF | Vishay Silic... | -- | 267 | MOSFET N-CH 600V 3.6A TO-... |
IRFB3306GPBF | Infineon Tec... | -- | 286 | MOSFET N-CH 60V 160A TO-2... |
IRFB23N20DPBF | Infineon Tec... | -- | 959 | MOSFET N-CH 200V 24A TO-2... |
IRFB33N15DPBF | Infineon Tec... | -- | 288 | MOSFET N-CH 150V 33A TO-2... |
IRFBC40APBF | Vishay Silic... | -- | 994 | MOSFET N-CH 600V 6.2A TO-... |
IRFB3307ZPBF | Infineon Tec... | -- | 10000 | MOSFET N-CH 75V 120A TO-2... |
IRFB7534PBF | Infineon Tec... | -- | 20000 | MOSFET N CH 60V 195A TO-2... |
IRFB7434PBF | Infineon Tec... | -- | 215 | MOSFET N CH 40V 195A TO22... |
IRFB4620PBF | Infineon Tec... | -- | 243 | MOSFET N-CH 200V 25A TO-2... |
IRFB3207ZPBF | Infineon Tec... | -- | 5000 | MOSFET N-CH 75V 120A TO-2... |
IRFBE30LPBF | Vishay Silic... | -- | 73 | MOSFET N-CH 800V 4.1A TO-... |
IRFBC30APBF | Vishay Silic... | -- | 174 | MOSFET N-CH 600V 3.6A TO-... |
IRFBC40LCPBF | Vishay Silic... | 3.52 $ | 43 | MOSFET N-CH 600V 6.2A TO-... |
IRFBC20SPBF | Vishay Silic... | -- | 429 | MOSFET N-CH 600V 2.2A D2P... |
IRFB4510GPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N CH 100V 62A TO-2... |
IRFB7437GPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N CH 40V 195A TO22... |
IRFB3806PBF | Infineon Tec... | -- | 3994 | MOSFET N-CH 60V 43A TO-22... |
IRFB5620PBF | Infineon Tec... | -- | 998 | MOSFET N-CH 200V 25A TO-2... |
IRFB4710PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 75A TO-2... |
IRFB4110GPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 120A TO2... |
IRFB4228PBF | Infineon Tec... | -- | 4 | MOSFET N-CH 150V 83A TO-2... |
IRFBC20 | Vishay Silic... | -- | 1000 | MOSFET N-CH 600V 2.2A TO-... |
IRFBC30 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.6A TO-... |
IRFBE20 | Vishay Silic... | -- | 1000 | MOSFET N-CH 800V 1.8A TO-... |
IRFBE30 | Vishay Silic... | -- | 1000 | MOSFET N-CH 800V 4.1A TO-... |
IRFBF20 | Vishay Silic... | -- | 1000 | MOSFET N-CH 900V 1.7A TO-... |
IRFBG20 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 1000V 1.4A TO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...