IRFB3006GPBF Allicdata Electronics
Allicdata Part #:

IRFB3006GPBF-ND

Manufacturer Part#:

IRFB3006GPBF

Price: $ 1.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 60V 195A TO220AB
More Detail: N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-...
DataSheet: IRFB3006GPBF datasheetIRFB3006GPBF Datasheet/PDF
Quantity: 1000
1 +: $ 1.89583
10 +: $ 1.64306
100 +: $ 1.32708
1000 +: $ 1.26389
10000 +: $ 1.20069
Stock 1000Can Ship Immediately
$ 1.9
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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IRFB3006GPBF is an insulated-gate field-effect transistor (IGFET), or simply a field-effect transistor (FET). It is a type of single junction field-effect transistor which utilizes insulated-gate electrodes and operates on the principle of electrostatic amplified current control. The current flow through the source–drain path is controlled by the gate. As opposed to the bipolar junction transistor, the IGFET does not require a current flow between the source and the gate terminal to switch on current conduction. The field-effect transistor uses capacitance to control the gate voltage and hence, the current conducted.

The IRFB3006GPBF is a N-channel enhancement-mode field-effect transistor constructed with a planar gate and drain structure. The drain and source are connected externally and monitored by a gate electrode. The gate electrode is insulated from the rest of the device except for a small window which has a thin gate oxide. The drain is connected to an external voltage, and the source is connected to ground. The gate electrode modulates the amount of current that can flow through the device by creating an electrostatic field between the drain and the source. This device is normally used in medium- and high-voltage applications.

The IRFB3006GPBF is designed primarily for high-voltage use and hence, it has a wide range of operating voltages. It is rated to operate at high current and power levels in a temperature range of -55 to 150 °C. Its most common application is as an amplifier or switch in power supplies, computer and automotive audio systems, and motor control circuits. The device has a low on-state resistance and a fast switching speed, which allows it to be used for a wide range of switching applications.

In terms of operation, the IRFB3006GPBF is an ‘enhancement-mode’ device, which means that the source forms an ohmic contact to the drain when the gate electrode is reverse-biased. This external bias voltage must be greater than a certain ‘threshold’ voltage for conduction to occur. This bias voltage is the parameter that controls the amount of current conducted. As the external bias voltage increases, the amount of current that can flow through the device increases exponentially.

The IRFB3006GPBF is designed to provide a low-cost, integrated solution for high-speed, high-power, high-voltage applications. It is capable of controlling both voltage and current simultaneously and is suitable for a wide variety of automotive, computer, industrial, and consumer applications. The device is highly reliable, robust, and cost-effective, and is ideal for applications that require high speed and low voltage. The device can be used in a wide range of applications including power supplies, motor control circuits, and audio systems.

Overall, the IRFB3006GPBF is an enhanced-mode insulated-gate field-effect transistor (IGFET) and is suitable for applications that require high speed, low voltage, and high power. The device is capable of controlling both voltage and current simultaneously, making it suitable for a wide variety of automotive, computer, industrial, and consumer applications. This device is designed to provide a low-cost, integrated solution that is highly reliable, robust, and cost-effective.

The specific data is subject to PDF, and the above content is for reference

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