IRFBC40LPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 130W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6.2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRFBC40LPBF is a high-power field effect transistor (FET) of the advanced, fast switching type. It offers stable performance and a number of unique characteristics that make it suitable for use in a wide range of applications. This article will discuss the application fields and working principles of the IRFBC40LPBF.Application Fields
The IRFBC40LPBF can be used in many application fields, including:

• High-power analogue circuits
• High-power digital circuits
• High-voltage and high-current switching circuits
• Heavy motor control circuits
• Bus termination circuits
• High-current auto-shutdown circuits
• High-current diagnostic circuits
• High-voltage isolation circuits

Working Principle
The IRFBC40LPBF is a metal-oxide-semiconductor field-effect transistor (MOSFET). It consists of three terminals: source, gate, and drain. The source and drain are connected to the power source, while the gate terminal is used to control the current flow. When a positive voltage (VGS) is applied to the gate terminal, the surface of the MOSFET becomes conducting, thereby allowing current to flow from the source to the drain. When the positive voltage is removed, the surface of the MOSFET switches back to its non-conducting state, thus stopping the flow of current. As the voltage potential of the gate terminal can be controlled, the IRFBC40LPBF allows users to precisely control the current flow through their circuit.In addition to its precise control over current flow, the IRFBC40LPBF also offers excellent switching speed and noise performance, as well as a variety of other benefits. It is a highly reliable device, and its small size makes it suitable for use in a wide range of applications. The IRFBC40LPBF can operate at a wide range of temperatures, from -55°C to +175°C. It is also capable of handling high voltage and large current spikes, thus making it suitable for a wide range of power supply applications.Conclusion
The IRFBC40LPBF is a versatile and reliable field effect transistor that can be used in a variety of applications. It offers precise control over current flow, excellent switching speed and noise performance, and a wide range of operational temperatures. Its small size and high reliability make it ideal for use in high-power circuits.

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