IRFBF30S Allicdata Electronics
Allicdata Part #:

IRFBF30S-ND

Manufacturer Part#:

IRFBF30S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 900V 3.6A D2PAK
More Detail: N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount D...
DataSheet: IRFBF30S datasheetIRFBF30S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Field effect transistors (FETs) are one of the most widely used type of transistor in the electronics field. They use an electric field to control the current in a circuit and are used for switching and amplifying signals. FETs come in a variety of configurations and designs, including those of the Integrated circuit Field-effect Transistor (IRFBT30S) variety, which are designed for a variety of applications.

The IRFBT30S is a single-gated FET, meaning that it has only one gate on the channel and is effectively a switch. This type of FET is commonly referred to as a “JFET” (Junction Field-Effect Transistor). It is manufactured using a process that combines different semiconductor materials, which then form a PN junction and a channel. This is what allows the IRFBT30S to work.

The IRFBT30S is commonly used in a variety of different applications, such as audio amplifiers, power supply switching and rectification, motor control, and voltage regulated power supplies. This type of FET is also highly versatile, which makes it suitable for a wide range of applications. Additionally, this kind of transistor provides a low gate drain capacitance, making it a great choice for high-speed switching.

When it comes to the working principle of the IRFBT30S, it can be thought of as a three-terminal device. The gate input of the device is the control port, and it is used to control the current flowing through the channel. When a voltage is applied to the gate, it creates an electric field between the gate and the source, which varies the resistance of the channel and thus affects the current flow. This is how the IRFBT30S operates.

The IRFBT30S can also be used in combination with other components to create a more complex electronic system. For example, they can be used in conjunction with MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) to provide additional control and amplification in a circuit. This makes the IRFBT30S a great choice for many applications.

In conclusion, the IRFBT30S is a single-gated FET which is used in a variety of applications, such as audio amplifiers, power supplies, motor control, and voltage regulation. The working principle of this type of transistor is based on the electric field created by the gate, which can vary the resistance of the channel and thus alter the amount of current flowing through it. Finally, the IRFBT30S can be used in combination with other components to create even more complex electronics.

The specific data is subject to PDF, and the above content is for reference

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