IRFB4321PBF Allicdata Electronics
Allicdata Part #:

IRFB4321PBF-ND

Manufacturer Part#:

IRFB4321PBF

Price: $ 2.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 83A TO-220AB
More Detail: N-Channel 150V 85A (Tc) 350W (Tc) Through Hole TO-...
DataSheet: IRFB4321PBF datasheetIRFB4321PBF Datasheet/PDF
Quantity: 1000
1 +: $ 2.26000
10 +: $ 2.19220
100 +: $ 2.14700
1000 +: $ 2.10180
10000 +: $ 2.03400
Stock 1000Can Ship Immediately
$ 2.26
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 350W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRFB4321PBF is a transistor, specifically a Field Effect Transistor (FET). These types of transistors are based on the use of an electric field to control the current that can pass through a semiconductor material by allowing voltage to control the conduction. FETs can be used in both digital and analog circuits, which makes them quite versatile. The IRFB4321PBF is a single device (single-MOSFET) that has three terminals: source, drain and gate. The source is connected to the voltage supply, the drain is connected to the load, and the gate acts as a switch, controlling the current from the source to the drain.

The IRFB4321PBF transistor is a surface-mount device (SMD) with a low on-resistance, low gate charge and low capacitance. It is designed to handle a maximum drain current of 19A and a maximum drain-source voltage of 100V. With a peak drain current and source-drain voltage, it can provide a continuous drain current of 14A and a maximum drain-source voltage of 75V. It is also protected by two internal current-limiting features: the in-built reverse body diode and the integrated reverse avalanche diode.

The application fields for the IRFB4321PBF are many and varied. It can be used in automotive, industrial, and other application fields, such as switch-mode power supplies, motor drives, radio frequency, and high-speed signal processing. In automotive applications, it can be used to control the current flowing in automotive systems, such as in the power electronics systems. In industrial applications, it can be used to control the voltage and current in industrial motors, inverters, and converters. In switch-mode power supplies and motor drives, it can be used to regulate the voltage and current in the devices, while in radio frequency and high-speed signal processing, it can be used to store energy, manage signal integrity, and provide high-speed switching.

The working principle of the IRFB4321PBF transistor is that it uses the gate-source voltage, or VGS, to control the current flowing through the device. When a positive voltage is applied to the gate, it creates an electric field that attracts the electrons in the source to the drain, allowing current to flow. When the voltage is lowered, or brought back to zero, the electric field is reduced and the electrons return to the source, stopping the flow of current. It is this ability to control the flow of current using only a small voltage that makes the IRFB4321PBF suitable for the wide range of applications that it is used in.

In summary, the IRFB4321PBF is a Field Effect Transistor that is suitable for use in automotive, industrial, and other application fields, as it offers a high level of control and protection. Its working principle is such that it uses the gate-source voltage to control the current flowing through the device, allowing it to be used in a wide range of applications. The IRFB4321PBF is an ideal choice for those who require a reliable and reliable transistor that can cope with the demands of their applications.

The specific data is subject to PDF, and the above content is for reference

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