| Allicdata Part #: | IRFBC30ASTRL-ND |
| Manufacturer Part#: |
IRFBC30ASTRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 600V 3.6A D2PAK |
| More Detail: | N-Channel 600V 3.6A (Tc) 74W (Tc) Surface Mount D2... |
| DataSheet: | IRFBC30ASTRL Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 2.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFBC30ASTRL is a power MOSFET made by International Rectifier Corporation. It is a uni means single drain using the N-Channel JFET technology. This power MOSFET gives high performance and reliability.
The IRFBC30ASTRL has a built-in low gate charge, low RDS(on), low reverse-recovery times and high current handling capability. It consists of an array of high power transistors, each equipped with its own source, gate, and drain. This device is designed for use in DC-DC converters, switched mode power supplies, motor control systems, and high-performance AC/DC conversion and switching applications.
The IRFBC30ASTRL is constructed from silicone which can operate from -55°C to 150°C and has a maximum drain-source voltage of 600V with a maximum drain current of 66A. It has an internal thermal shut-off that ensures that it does not become damaged when it is exposed to high temperatures. Furthermore, its power dissipation capabilities can go as high as 3 Watts.
The operation principle of the IRFBC30ASTRL is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) technology. A gate voltage is applied between the source and the drain which causes a current to flow from the source to the drain. This current is proportional to the gate voltage. By varying the gate voltage, the amount of current flowing through the device can be controlled. This allows the device to be used to control the flow of current in a variety of applications.
The IRFBC30ASTRL can be used in a variety of applications such as DC-DC converters, switched-mode power supplies, motor control systems, and AC/DC conversion and switching. It can also be used in applications that require high performance and reliability. It is suitable for use in a wide range of power-electronics systems, including automotive and industrial applications.
The IRFBC30ASTRL provides an excellent alternative to the traditional transistor architecture and is able to provide the same level of performance with a much lower power consumption. Therefore, it is an ideal choice for those applications where power consumption is a major concern. By utilizing the IRFBC30ASTRL, engineers are able to optimize their designs in terms of power, performance, and reliability.
The specific data is subject to PDF, and the above content is for reference
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IRFBC30ASTRL Datasheet/PDF