| Allicdata Part #: | IRFBG20L-ND |
| Manufacturer Part#: |
IRFBG20L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 1000V 1.4A TO-262 |
| More Detail: | N-Channel 1000V 1.4A (Ta) Through Hole I2PAK |
| DataSheet: | IRFBG20L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -- |
| Power Dissipation (Max): | -- |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 11 Ohm @ 840mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRFBG20L is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single junction field-effect transistor, meaning that it has only one junction. It is one of the most commonly used type of MOSFETs due to its low on-state resistance, low gate threshold voltage, and small size. It is commonly used in high-power applications, such as high-frequency switching, power conversion, and motor control.
The structure of an IRFBG20L consists of three major components, the gate, the source, and the drain. The gate is the control terminal of the device, and is responsible for controlling the current flowing through the device. The source and the drain are the two output terminals of the device, and are responsible for carrying the electric current from the source to the drain. A reverse biased voltage is applied to the gate, which causes the transistor to conduct the current.
The working principle of the IRFBG20L is based on the phenomenon of the electrostatic field effect. When a reverse biased voltage is applied to the gate, it produces an electric field, which affects the movement of the electrons across the channel between the source and the drain. This field effect causes the electrons to travel more easily across the channel, resulting in a lower on-state resistance and lower gate threshold voltage.
The IRFBG20L is usually used in high-power applications such as switching and motor control. In high-power applications, it is important to be able to switch the current on and off quickly and efficiently, and this is where the IRFBG20L excels. Its low on-state resistance and low gate threshold voltage enable it to switch the current on and off quickly and efficiently. Additionally, its small size means that it can be used in a variety of applications where space is a concern.
The IRFBG20L is a popular choice for high-power applications because of its low on-state resistance, low gate threshold voltage, and small size. Additionally, it is a cost effective solution, as it is a relatively inexpensive device. It is one of the most commonly used type of MOSFETs and is commonly used for high-frequency switching, power conversion, and motor control.
The specific data is subject to PDF, and the above content is for reference
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IRFBG20L Datasheet/PDF