| Allicdata Part #: | IRFB4215-ND |
| Manufacturer Part#: |
IRFB4215 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 115A TO-220AB |
| More Detail: | N-Channel 60V 115A (Tc) 270W (Tc) Through Hole TO-... |
| DataSheet: | IRFB4215 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 270W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4080pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 54A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 115A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFB4215 is a type of insulated-gate field-effect transistor (IGFET), which belongs to the class of single-field-effect transistors (MOSFETs). It is a three-terminal device useful for low voltage power switching and regulating applications.
The IRFB4215 can support drain-source (Vdss) voltages up to 400 V and maximum drain current (Id) of 57A. It is designed for maximum operating junction temperatures up to 175°C, and a high speed switching operation with a fast operating time of 28ns.
The basic construction of an IRFB4215 is similar to a metal-oxide-semiconductor (MOS) structure, in which a metal (source and drain) contacts an oxide layer which contains the field effect channels. The MOS structure enables carriers to be easily injected in and out of the device. A gate contact is used to control the source-drain current.
The operating principle of the IRFB4215 is based on the modulation of the source-drain current by a gate voltage. The gate-source voltage (Vgs) is applied between the gate and the source of the device. When the gate-source voltage (Vgs) is negative, it creates an inverted channel in the SiO2 layer which results in a very high drain-source resistance and blocks the current flow. When the applied gate-source voltage (Vgs) is above the threshold voltage (Vth), an inversion layer is formed in the SiO2 layer, resulting in a reduction of the drain-source resistance and the flow of current through the device. This modulation allows the IRFB4215 to be used as a switch in many circuits.
The IRFB4215 is widely used in a variety of low-voltage direct-current (DC) power applications, as it is suitable to support moderate current/voltage and can be easily integrated into a variety of electronics. It is commonly used in a variety of power supplies, including DC-DC converters, DC-AC inverters and buck regulators. It is also used in systems requiring high-diode conduction and fast switching, such as motor speed control and solenoid driver circuits.
In addition, the IRFB4215 can be used in a variety of analog circuits, such as audio amplifiers, line drivers and power amplifiers. It is also widely used in personal computers, mobile phones and other consumer electronics.
The IRFB4215 is a simple and reliable device and can be easily integrated into circuits for a variety of low-voltage power applications. It is capable of blocking high voltage and it offers good levels of EMI suppression. It also offers fast switching operation, and is highly reliable with an extended life cycle.
The specific data is subject to PDF, and the above content is for reference
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IRFB4215 Datasheet/PDF