IRFBC30STRR Allicdata Electronics

IRFBC30STRR Discrete Semiconductor Products

Allicdata Part #:

IRFBC30STRR-ND

Manufacturer Part#:

IRFBC30STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 600V 3.6A D2PAK
More Detail: N-Channel 600V 3.6A (Tc) 3.1W (Ta), 74W (Tc) Surfa...
DataSheet: IRFBC30STRR datasheetIRFBC30STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFBC30STRR is a widely used high-speed, high-current N-channel MOSFET transistor. It has a very diverse range of applications and is a commonly used component in many electronic circuits. This transistor is designed for use in high-frequency switching circuits, and can be used in a wide range of applications from simple switching circuits to sophisticated signal processing.

First let us look at what makes the IRFBC30STRR so special. It has a voltage-controlled channel, meaning that it can be used to control the flow of current between two points. The transistor also has an exceptionally low gate-to-source capacitance and a very low on-state resistance. This combination of features makes the IRFBC30STRR an ideal choice for high-speed switching applications.

The IRFBC30STRR has a breakdown voltage of 30 volts (Vbd), which is relatively high for a transistor of its size. This means that it can be used in applications where high voltages are often encountered. Additionally, the transistor has a maximum drain-source current rating of 27 Amps, making it one of the highest-powered transistors of its size. This makes it suitable for applications where high currents are needed, such as in motor control applications.

Another important aspect of this transistor is its gate threshold voltage. This is the voltage at which the transistor will turn on and start to conduct current. The IRFBC30STRR has a gate threshold voltage of 3.0 volts, which is quite low. This makes it suitable for use in low-voltage circuits, such as those found in mobile devices. Furthermore, the transistor has an impressive power dissipation rating of up to 245 Watts, making it suitable for use in power switching applications.

The IRFBC30STRR is an incredibly versatile transistor, as its application field and working principle can be adapted for a wide range of electronic circuits. The transistor is most commonly used in high-frequency switching circuits, such as in radio frequency (RF) PA stages, power amplifiers, and high-speed analog circuits. Furthermore, the transistor can also be used in low-noise, low-frequency circuits, such as in regulated power supplies, voltage multipliers, and sensor circuits.

The IRFBC30STRR is an incredibly reliable transistor, and its impressive specifications make it one of the most commonly used transistors available. Its low-voltage operation, high-frequency switching capability, and its ability to support high currents make it an ideal choice for a wide range of applications. The transistor is easily one of the most versatile and reliable options available, and it can be used in almost any circuit. So, if you are looking for a transistor that is capable of coping with high frequencies and high currents, then the IRFBC30STRR is definitely one you should consider.

The specific data is subject to PDF, and the above content is for reference

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