| Allicdata Part #: | IRFB3006PBF-ND |
| Manufacturer Part#: |
IRFB3006PBF |
| Price: | $ 2.91 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 60V 195A TO-220AB |
| More Detail: | N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-... |
| DataSheet: | IRFB3006PBF Datasheet/PDF |
| Quantity: | 2785 |
| 1 +: | $ 2.91000 |
| 10 +: | $ 2.82270 |
| 100 +: | $ 2.76450 |
| 1000 +: | $ 2.70630 |
| 10000 +: | $ 2.61900 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 375W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8970pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 170A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IRFB3006PBF, also known as a Power MOSFET, is a voltage controlled field effect transistor. It is one of the most commonly used MOSFETs available today. It is often used in applications such as power supplies and motor control. It has a low on-state resistance and high switching performance, making it ideal for these applications.
IRFB3006PBF is an enhancement type MOSFET and operates by the transfer of electrons from the source to the drain, as opposed to most FETs which operate by the transfer of holes from the source to the drain. This type of transfer allows for a larger current flow than other types of FETs. The transfer of electrons is facilitated by the gate voltage. When the gate voltage is equal to or greater than the threshold voltage the MOSFET is turned on and the current flow is allowed. When the gate voltage is less than the threshold voltage then the MOSFET is off and no current flow is allowed.
IRFB3006PBF has many advantages over other types of MOSFETs. It has a low on-state resistance, which increases its efficiency and decreases power losses, making it suitable for applications such as in power supplies. It also has high switching performance, meaning that it can handle high current and voltage. Additionally, it is relatively inexpensive and easy to find in most electronic stores.
The IRFB3006PBF is commonly used in a wide variety of applications, including motor control, power supplies, and other types of power electronics. In motor control, it can be used to control the speed and direction of the motor by switching the voltage applied. In power supplies, the MOSFET can be used to regulate the voltage and current levels to ensure the appropriate output. It can also be used in other power electronics applications, such as LED drivers, as it is able to handle high current and voltage levels.
IRFB3006PBF is a widely used type of field effect transistor. It operates by the transfer of electrons from the source to the drain, as opposed to most FETs which operate by the transfer of holes. This type of transfer allows for a larger current flow than other types of FETs. Its advantages include a low on-state resistance, high switching performance, and low cost. It is a very commonly used MOSFET and can be used in a variety of applications such as motor control, power supplies, and other types of power electronics.
The specific data is subject to PDF, and the above content is for reference
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IRFB3006PBF Datasheet/PDF