IRFBA1404 Allicdata Electronics
Allicdata Part #:

IRFBA1404-ND

Manufacturer Part#:

IRFBA1404

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 206A SUPER-220
More Detail: N-Channel 40V 206A (Ta) 300W (Tc) Through Hole SUP...
DataSheet: IRFBA1404 datasheetIRFBA1404 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: Super-220™-3 (Straight Leads)
Supplier Device Package: SUPER-220™ (TO-273AA)
Mounting Type: Through Hole
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 206A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFBA1404 is a fast-switching N-channel MOSFET commonly used in many different applications. It is one of the most popular MOSFETs on the market and is highly desirable in many different areas. This article will discuss the application fields of the IRFBA1404 as well as its working principle.

Application Fields
The IRFBA1404 is used in a variety of applications. It is most often used in power applications that require high current and/or high power. Common uses include power supplies, DC to DC converter circuits, inverter circuits, automotive electronics, power amplifiers, and switching circuits. It is also commonly used in high-voltage circuits due to its ability to handle high voltages.

Additionally, the IRFBA1404 is also used in many low-power applications. Its low on-state resistance and fast switching times make it ideal for switching circuits and other applications that require a low input current and a fast response time. It is also commonly used in communication circuits due to its low resistance and low capacitance.

Working Principle
The IRFBA1404 is a fast-switching N-channel MOSFET. It works by having a layer of gate material, typically silicon dioxide, between two N-type semiconductor layers. The N-type material is a semiconductor material with an extra valence electron. This electron is able to be moved by a voltage applied to the gate. When the gate voltage is increased, the electrons move away from the gate and cause a change in the electrical resistance between the source and drain of the device.

The MOSFET also has a body or bulk terminal that is connected to the gate material. This terminal is used to control the overall resistance of the device. When the body voltage is increased, the overall resistance of the device is reduced, allowing more current to flow through it. This is how the IRFBA1404 is able to control the current flowing through it.

The IRFBA1404 is a popular choice for many power and switching applications due to its low on-state resistance and fast switching times. Its desirable characteristics make it a good choice for many electronic designs. This article has discussed the application fields and the working principle of the IRFBA1404.

The specific data is subject to PDF, and the above content is for reference

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