IRFBA1404P Allicdata Electronics
Allicdata Part #:

IRFBA1404P-ND

Manufacturer Part#:

IRFBA1404P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 206A SUPER-220
More Detail: N-Channel 40V 206A (Tc) 300W (Tc) Through Hole SUP...
DataSheet: IRFBA1404P datasheetIRFBA1404P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: Super-220™-3 (Straight Leads)
Supplier Device Package: SUPER-220™ (TO-273AA)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 206A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRFBA1404P is a P-channel enhancement mode MOSFET that is widely used as a switch due to its low on-state resistance, compact size, and low price. This particular MOSFET is designed to handle up to 60V and has a maximum drain current rating of 14A. The device is suitable for use in a wide range of applications, including power management in consumer electronics products, such as televisions, car audio systems, and cell phones, as well as industrial motor control applications.

The working principle of MOSFETs like the IRFBA1404P is based on the way they ensure the flow of electric current between the source and drain electrodes, while the gate electrode controls the device functionality. It is the differences in potential between the source and gate electrodes that control the device operation. A small voltage between the gate and source pins is enough to turn the MOSFET on, allowing current to flow freely between the source and drain. The larger the voltage between the gate and source, the larger the channel and the lower the channel resistance. This enables the MOSFET to achieve a very low on-state resistance, allowing for greater levels of efficiency.

The IRFBA1404P is ideal for use in low power applications, due to its low on-state resistance and low RDS (on). Its ability to operate over a wide range of temperatures makes it an ideal choice for operation in harsh environments. Additionally, the device is designed with a lowGate-Source capacitance, making it ideal for switching applications. The MOSFET also has excellent avalanche characteristics, making it ideal for use in circuits that require high levels of protection.

The device is offered in various packages, and can be used in a variety of applications, including power management, motor control, switch mode power supplies, and power semiconductor applications. The device can be driven by a wide range of gate drivers and is also suitable for use in many common logic families. Additionally, the device is capable of meeting the industry-standard for ESD protection, making it suitable for use in applications where the sensitive components may be exposed to ESD.

In summary, the IRFBA1404P is a popular P-channel MOSFET, and is widely used in a number of applications. Its low on-state resistance, compact size, and low price make this device an ideal choice for use in power semiconductor applications, as well as power management, motor control, and switch mode power supplies. Additionally, the device is designed to meet the industry-standard for ESD protection, making it suitable for use in circuits that require high levels of protection.

The specific data is subject to PDF, and the above content is for reference

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