IRFBA1405P Allicdata Electronics
Allicdata Part #:

IRFBA1405P-ND

Manufacturer Part#:

IRFBA1405P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 174A SUPER-220
More Detail: N-Channel 55V 174A (Tc) 330W (Tc) Through Hole SUP...
DataSheet: IRFBA1405P datasheetIRFBA1405P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: Super-220™-3 (Straight Leads)
Supplier Device Package: SUPER-220™ (TO-273AA)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 101A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFBA1405P is an N-channel enhancement-mode vertical DMOS FET. It is mainly used as a switching device with electrostatic discharge (ESD) protection. This device is ideal for use in applications such as automotive and industrial power applications, as well as home appliances. In addition, it is also suitable for use in high-power, low-noise applications due to its low noise performance.

The IRFBA1405P is a three-terminal device composed of a drain, source and gate. For a given gate voltage, the drain-to-source current is determined by the terminal voltage. The device has a high input impedance and can be directly connected to the gate terminal. This ensures a low-power operation with fast switching and low on-state resistance. In addition, it has an extremely low input capacitance that improves performance in high-speed switching applications.

The working principle of the IRFBA1405P can be explained as follows. Inside the device, the voltage applied to the gate terminal controls the current flowing through the device by varying the width of the depletion layer between the source and the drain. When a positive voltage is applied to the gate, electrons are induced and the drain-to-source channel is established. This causes the current to flow from the drain to the source. When a negative voltage is applied to the gate, the channel is blocked and the current stops flowing. For this reason, the device is capable of acting as a switch and is commonly used in electronic switching applications.

The IRFBA1405P is used in a variety of applications due to its high input impedance, excellent switching speed and low on-state resistance. It is commonly used in power switching applications, as it is capable of handling a maximum of 100V. In addition, it is also used as a protection device in applications such as automotive and industrial power systems, protecting against electrostatic discharges. Furthermore, the low input capacitance of the device enables it to be used in high-speed, low-noise applications.

In conclusion, the IRFBA1405P is a versatile device with many applications. It is an N-channel enhancement-mode vertical DMOS FET with a high input impedance, fast switching speed and low on-state resistance. It is suitable for use in power switching applications, as well as protecting devices in automotive and industrial power systems. In addition, it is also well suited for use in high-speed, low-noise applications due to its low input capacitance.

The specific data is subject to PDF, and the above content is for reference

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