
Allicdata Part #: | IRFBA1405P-ND |
Manufacturer Part#: |
IRFBA1405P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 174A SUPER-220 |
More Detail: | N-Channel 55V 174A (Tc) 330W (Tc) Through Hole SUP... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | Super-220™-3 (Straight Leads) |
Supplier Device Package: | SUPER-220™ (TO-273AA) |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Power Dissipation (Max): | 330W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5480pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 101A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 174A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFBA1405P is an N-channel enhancement-mode vertical DMOS FET. It is mainly used as a switching device with electrostatic discharge (ESD) protection. This device is ideal for use in applications such as automotive and industrial power applications, as well as home appliances. In addition, it is also suitable for use in high-power, low-noise applications due to its low noise performance.
The IRFBA1405P is a three-terminal device composed of a drain, source and gate. For a given gate voltage, the drain-to-source current is determined by the terminal voltage. The device has a high input impedance and can be directly connected to the gate terminal. This ensures a low-power operation with fast switching and low on-state resistance. In addition, it has an extremely low input capacitance that improves performance in high-speed switching applications.
The working principle of the IRFBA1405P can be explained as follows. Inside the device, the voltage applied to the gate terminal controls the current flowing through the device by varying the width of the depletion layer between the source and the drain. When a positive voltage is applied to the gate, electrons are induced and the drain-to-source channel is established. This causes the current to flow from the drain to the source. When a negative voltage is applied to the gate, the channel is blocked and the current stops flowing. For this reason, the device is capable of acting as a switch and is commonly used in electronic switching applications.
The IRFBA1405P is used in a variety of applications due to its high input impedance, excellent switching speed and low on-state resistance. It is commonly used in power switching applications, as it is capable of handling a maximum of 100V. In addition, it is also used as a protection device in applications such as automotive and industrial power systems, protecting against electrostatic discharges. Furthermore, the low input capacitance of the device enables it to be used in high-speed, low-noise applications.
In conclusion, the IRFBA1405P is a versatile device with many applications. It is an N-channel enhancement-mode vertical DMOS FET with a high input impedance, fast switching speed and low on-state resistance. It is suitable for use in power switching applications, as well as protecting devices in automotive and industrial power systems. In addition, it is also well suited for use in high-speed, low-noise applications due to its low input capacitance.
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