IRFBG30PBF Allicdata Electronics
Allicdata Part #:

IRFBG30PBF-ND

Manufacturer Part#:

IRFBG30PBF

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 1000V 3.1A TO-220AB
More Detail: N-Channel 1000V 3.1A (Tc) 125W (Tc) Through Hole T...
DataSheet: IRFBG30PBF datasheetIRFBG30PBF Datasheet/PDF
Quantity: 1571
1 +: $ 1.46160
10 +: $ 1.40160
100 +: $ 1.30070
1000 +: $ 1.12910
10000 +: $ 0.77590
Stock 1571Can Ship Immediately
$ 1.46
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFBG30PBF is a popular type of field effect transistor (FET) for a variety of applications.

Field effect transistors are electronic components that control the flow of electrical current through a circuit. They use the field effect, which involves the application of a voltage across a semiconductor material to control the current flowing through the device. This makes them ideal for use in applications such as power electronics and various other switching, control, and signal processing applications.

The IRFBG30PBF is a type of metal–oxide–semiconductor field-effect transistor (MOSFET). It is a single device with an N-channel, meaning that it is able to control the current flow between the drain and source terminals. The device is capable of blocking or enabling the current based on the voltage applied, allowing it to be used as a switch or amplifier.

The IRFBG30PBF\'s application field is broad and its uses are many, ranging from power electronics, to lights, to microprocessors. It is especially well-suited for use in applications where very low gate drive is required, due to its extremely low input capacitance. It is also commonly used in high speed switching applications due to its low gate charge and fast switching times.

Because of its relatively small size – it only measures 4.3 mm x 4.3mm – it is often used for space-saving applications, such as in portable devices or hand-held equipment.

The working principle of a field effect transistor like the IRFBG30PBF is simple. By applying a voltage across the gate and source terminals of the device, the electric field created controls the current flow between the drain and source. When a positive voltage is applied to the gate terminal, the electric field attracts minority carriers to the channel, which allows current to flow through the device. When the voltage is reversed, the minority carriers move away from the channel, thus blocking the current flow.

The IRFBG30PBF is a great example of modern semiconductor technology as it provides efficient, low cost and reliable switching solutions in a variety of applications. It is well suited for use in power electronics and other continuous or pulse power applications, making it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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