IRFHM9391TRPBF

Vgs(th) (Max) @ Id:	2.4V @ 25µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (3.3x3.3), Power33
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1543pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	14.6 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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IRFHM9391TRPBF Application Field and Working PrincipleIRFHM9391TRPBF is a type of Insulated-Gate Bipolar Transistor (IGBT). It is a power semiconductor used in electric motor control, switching, and signal processing applications. The IRFHM9391TRPBF is a high-speed, low-frequency, low-voltage N-channel device. It has a wide range of applications in motor control, power management, and signal switching.The IRFHM9391TRPBF is designed using trench-gate technology and features a thin film dielectric insulation layer between the gate electrode and die. This insulation allows the device to operate with higher breakdown voltage compared to older IGBTs. This highlights to its suitability for use in power systems where high-frequency switching is required. The insulation layer also increases the device’s immunity to transient over voltages.An example of a use of this IGBT is in switching applications such as motor control. The IRFHM9391TRPBF can be used as a switch to control the current in an electric motor. The device works by switching on and off in a predetermined pattern. As current passes through the device, it alternates between a conducting and a non-conducting state, according to the switching pattern. This allows the motor to be operated in a range of speeds and directions.This device is also used in PWM (Pulse-Width Modulation) applications. In high-frequency, low-current switching situations, this device can be used to reduce the amount of current that needs to flow through the system and thereby reduce power losses and eliminate the need for large power transistors.The working principle of the IRFHM9391TRPBF is similar to other IGBTs. It is an N-channel device with a gate-controlled channel, between the source and drain terminals. When the gate is driven with a positive voltage, electrons are attracted to the gate, forming a "channel" of electrons. This channel is responsible for controlling current flow between the source and the drain terminals. When the voltage applied to the gate is decreased, the channel closes, blocking current flow. By varying the gate voltage, the device can be used to switch on and off, allowing for control of current flow in loads connected to it. The IRFHM9391TRPBF was designed to handle high-frequency switching, with solid-state resistance at maximum ratings of up to 6 A with 5 nsec rise/fall times and 5 nsec input-to-output delay times. It also features integrated feedback circuitry, reducing power losses and system power requirement by providing internal current sensing. It has an operating temperature range of -55 ˚C to 150 ˚C.The IRFHM9391TRPBF is available in a TO- 263AB, 5-pin-package. It has a nominal Vce (Collector-Emitter Voltage) of 100 V and an Ic (Continuous Collector Current) of 6 A. The device is RoHS compliant and is available in either green or blue packages, with lead-free terminations.The IRFHM9391TRPBF is a versatile IGBT suitable for applications that require high-speed switching, such as motor control and PWM. Its wide range of operating temperatures, its low on-state resistance, and its integrated feedback circuitry makes it an ideal choice for any high-frequency application.

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