| Allicdata Part #: | IRFH5110TR2PBFCT-ND |
| Manufacturer Part#: |
IRFH5110TR2PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 5X6 PQFN |
| More Detail: | N-Channel 100V 11A (Ta), 63A (Tc) 3.6W (Ta), 114W ... |
| DataSheet: |  IRFH5110TR2PBF Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 100µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.6W (Ta), 114W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3152pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 37A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 63A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Cut Tape (CT) |
Description
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IRFH5110TR2PBF is a type of JFET (Junction Field-Effect Transistor), which is a three-terminal unipolar transistor commonly used in the areas of low-noise amplifiers, audio preamplifiers, and voltage-controlled amplifiers. It is an N-channel JFET device, with its source terminal, gate terminal and drain terminal. This device is specially designed for low-power audio applications, and specialized for its low-noise performance and low-distortion characteristics. In terms of its application field, this type of JFET can be used in many kinds of low-noise audio circuits, such as low-noise amplifiers and voltage controlled amplifiers. It can also be used in audio preamplifiers and low-noise receivers. Moreover, the IRFH5110TR2PBF can be used in other high-precision analog signal processing purposes, such as data acquisition, modulation, and modulation detection.It features high-performance device gain, which is usually around 10 to 20dB, and low noise figure of around 1.0dB. Additionally, the IRFH5110TR2PBF also offers excellent gain-bandwidth performance, which makes it suitable to use in both AC and DC applications. In addition, its high operational stability makes it an ideal choice for high-precision applications.The working principle of the IRFH5110TR2PBF is tied to its physical structure. The device consists of two diodes and a source-drain junction sandwiched between two layers of a semiconductor material. When the gate terminal is biased with an external voltage, current is able to flow through the diodes. This current flow controls the flow from the source to the drain, resulting in the device gain. The IRFH5110TR2PBF device is widely used in the area of high-precision analog signal processing applications due to its high performance, low noise characteristics, and excellent gain-bandwidth performance. Additionally, its performance and low-noise characteristics make it an ideal choice for use in audio preamplifiers and low-noise receivers.The specific data is subject to PDF, and the above content is for reference
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