IRFH7084TRPBF Allicdata Electronics
Allicdata Part #:

IRFH7084TRPBFTR-ND

Manufacturer Part#:

IRFH7084TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A PQFN
More Detail: N-Channel 40V 100A (Tc) 156W (Tc) Surface Mount 8-...
DataSheet: IRFH7084TRPBF datasheetIRFH7084TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6560pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFH7084TRPBF is a N-Channel Enhancement Mode MOSFET from the Vishay Siliconix family, with high power dissipation and low gate-threshold voltage. It has environment-friendly packages that incorporate a lead-free matte tin finish on the external contact finishes. This device is ideal for power management applications with low-voltage switch control requirements and where superior device reliability is important.

The Vishay Siliconix IRFH7084TRPBF can be found in several applications. It is used as a switch and for load control in DC-DC power converters, power factor correction and resonant converters. It is also widely used as a switch in PWM light dimmers, LED driver ICs, motor drives, audio power amplifiers, switched-mode power supplies, and regulators.

In addition to its various applications, the IRFH7084TRPBF is also popular with its working principle. It is a N-channel enhancement-mode field-effect transistor (FET) with a low gate-threshold voltage and high power dissipation, enabling efficient power management. The source and drain terminals of the device are connected to a channel of p-type silicon, which functions as a conducting channel, when a positive voltage is applied to the gate terminal. The gate-source voltage (VGS) must establish the threshold voltage, VGS(th), that turns the FET on and off. The threshold voltage decides how much current flows from the source to the drain, and the generated current is known as the Drain-Source current (ID).

The IRFH7084TRPBF, having a low gate-threshold voltage, requires a gate voltage of only 1.1V at saturation, making it suitable for use with a wide range of gates, from digital integrated circuits to analog gates. The resistor between the gate terminal and the source is known as the gate impedance and is also used to control the voltage, current, and power dissipation. The device also features high current capacity with excellent dV/dt characteristics and low on-state resistance, enabling better performance with synchronous rectification.

The IRFH7084TRPBF is available in a variety of packages. The surface-mount TO-252 package, also called PowerPAK, is an environment-friendly package with lead-free matte tin finish on the external contact finish. This package has a C-bend to reduce the profile, allowing more flexibility in design. The device is also available in an ultra-mini plastic small-outline package (UMAX-6) with a lead-free matte tin finish on the external contact finish. This package is popular for its low total profile and space-saving design.

The Vishay Siliconix IRFH7084TRPBF is a highly versatile device, suitable for a wide range of power management applications. It is available in a variety of packages to suit the specific design requirements. The device features low gate-threshold voltage and high power dissipation, enabling efficient power management along with excellent dV/dt characteristics and low on-state resistance for higher performance.

The specific data is subject to PDF, and the above content is for reference

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