IRFH7185TRPBF Discrete Semiconductor Products

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IRFH7185TRPBF is an N-Channel Field Effect Transistor (FET) developed by Infineon Technologies, which is ideal for applications that require maximum efficiency, higher current capacity, and high linearity. The device is specifically engineered to withstand challenging transient thermal stresses and offers long-term reliability. This paper will discuss the application field and working principle of IRFH7185TRPBF.

IRFH7185TRPBF is designed for use in high current, high voltage applications. It can be used for switching and linear applications such as audio and power amplifiers, high-current motor drivers, HVAC systems, automotive applications, and solar energy systems. The device operates with a supply voltage between 10 V and 100 V and a continuous drain current of up to 60 A. It also has a high input impedance, a low gate-source capacitance, and a low output capacitance, allowing it to operate efficiently.

The device is an enhancement-mode, N-Channel FET with a P-type substrate and an output drain-to-source voltage (Vds) of up to 100 V. It has a low on-resistance of 0.0042 ohms and a fast switching speed. The built-in protection features place the device in a safe state when under overload or short circuit conditions. In addition, the IRFH7185TRPBF features a customized body diode which improves efficiency and enables operation in fan-assisted or forced-air cooling systems.

The device works by creating an electric field in the substrate, which causes a depletion region to form at the PN junction. This depletion region is a dielectric barrier that prevents the transfer of electrons and holes between the two regions. When a positive voltage is applied to the gate of the FET, it creates an attractive electric field that pulls electrons from the source terminal to the gate, and holes are swept from the gate to the drain terminal. This increases the current flow through the FET and allows for power switching.

The device is protected by several features that allow it to withstand overload and short circuit conditions. The device features over-temperature and over-current protection, capacitive discharge current limitation, over-voltage protection, and the built-in body diode. These features ensure that the device is able to operate safely and reliably even under extreme conditions.

IRFH7185TRPBF is a versatile and reliable FET designed for use in a variety of applications. Its fast switching speed, low on-resistance, and ability to withstand thermal stresses makes it an ideal choice for high-current applications. The built-in protection features make it a safe and reliable choice for use in a variety of different applications.

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