IRFH5220TR2PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFH5220TR2PBF is a single N-channel power field-effect transistor (FET) designed for use in high-current applications such as motor control and consumer electronics. It features a low resistance channel which allows for high-speed switching, good thermal performance, and fast switching speeds. This device is available in two grades: a standard grade and high-temperature grade. The standard grade can handle up to 85°C and the high-temperature grade can withstand temperatures up to 150°C.

The device features a low gate to drain capacitance, which enables better efficiency and faster operating times. The IRFH5220TR2PBF has a relatively low on-resistance (RDSON) value and a high-current-carrier mobility (a measure of how fast the carriers are able to move through the device) so it can operate at higher frequencies and dissipate higher amounts of power in a given time period. It also has a low gate threshold voltage and low gate resistance for improved efficiency.

The IRFH5220TR2PBF is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It consists of three terminals – the gate, source and drain, with the gate controlling the flow of current across the drain-source channel by applying a voltage to the gate, creating a field that attracts the electrons to the gate and allows current to flow.

The gate-source voltage (VGS) is what divides the device into an on-state and off-state. When the VGS is above the threshold voltage (Vth), the device is in an on-state and current starts to flow through the channel, while when VGS is below the threshold voltage, the channel is closed and no current flows. The maximum current carrying capability of the IRFH5220TR2PBF is determined by how much power is dissipated in the drain-source channel.

The IRFH5220TR2PBF is used in a wide range of applications including motor control, consumer electronics, and automotive systems. Its high-current capability and low gate-source capacitance makes it ideal for applications such as DC-DC converters, switching power supplies, light dimmers, and LED backlight controllers. Its fast switching speed and low on-resistance also make it suitable for applications such as smart lighting control and energy management.

In conclusion, the IRFH5220TR2PBF is one of the most popular choice of power field-effect transistors due to its high current-carrying capability, fast switching speed, low capacitance, and low threshold voltage. It is widely used in applications such as motor control, consumer electronics, automotive systems and lighting control.

The specific data is subject to PDF, and the above content is for reference