| Allicdata Part #: | IRFH5025TR2PBFCT-ND |
| Manufacturer Part#: |
IRFH5025TR2PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 250V 3.8A PQFN |
| More Detail: | N-Channel 250V 3.8A (Ta) 3.6W (Ta), 8.3W (Tc) Surf... |
| DataSheet: |  IRFH5025TR2PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 150µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.6W (Ta), 8.3W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 5.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Cut Tape (CT) |
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IRFH5025TR2PBF is one of the most popular metal-oxide-semiconductor field-effect transistors (MOSFETs). This type of semiconductor device is used in a variety of applications, from power control in industrial, automotive and medical systems to switching applications in consumer electronics. As a single-transistor type, this particular MOSFET is designed for low voltage operation and offers both forward and reverse conduction. Its applications range from high-voltage power control to low-voltage switching.
Compared to bipolar junction transistors, MOSFETs are more efficient in regards to power use. However, they are more prone to "right-turning" if higher voltages are applied, and they have a tendency to dissipate more power than their bipolar counterparts. The IRFH5025TR2PBF is designed to address both of these issues, making it a great choice for applications that need to conserve both energy and power.
The principle of operation of an IRFH5025TR2PBF is fairly simple. It is a voltage-controlled device which has two terminals, the source and the drain. When a voltage difference is applied across these terminals, electrons are attracted from the source toward the drain, creating an electric field between the two. This electric field, in turn, modulates the current that can flow between the source and the drain, and thus controls the power that the MOSFET can deliver.
The IRFH5025TR2PBF is a versatile type of MOSFET that is used in a variety of applications. This particular model is ideal for power control and switching applications in consumer electronics and other low-voltage applications. It is also used in industrial, automotive, and medical systems when power saving and efficiency are important. The IRFH5025TR2PBF is a great choice for these applications because it offers both forward and reverse conduction, is particularly efficient in terms of power management, and is designed to address the issue of "right-turning" common to other MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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