
IRFHM8342TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFHM8342TRPBFTR-ND |
Manufacturer Part#: |
IRFHM8342TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 10A 8PQFN |
More Detail: | N-Channel 30V 10A (Ta) 2.6W (Ta), 20W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (3.3x3.3), Power33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta), 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFHM8342TRPBF is a high-performance, high-voltage, high-current, N-channel power MOSFET transistor. It is an optimized power MOSFET for use in a variety of high-current switching applications. The MOSFET is specifically designed for use in power distribution and control, power management, and motor control applications.
This power transistor is made with a fourth-generation TrenchMOS process technology and is especially suitable for high-current, low-voltage applications. The IRFHM8342TRPBF features a low on-state resistance and fast switching speeds. It is rated for an operating temperature of -55°C to 175°C, making it suitable for a wide range of applications.
The IRFHM8342TRPBF is widely used in motor control, power control, and power distribution applications. The device is also suitable for analog, audio, and RF switching applications. It is also widely used in high-current switching applications, such as DC-DC converters, UPS systems, battery chargers, and other power switching circuits.
The IRFHM8342TRPBF is a high-voltage, high-current N-channel power MOSFET, which can be used for load switching, level shifting, and polarity control. Its low on-state resistance and fast switching speeds make it ideal for power distribution, control, and motor control applications.
The IRFHM8342TRPBF offers excellent temperature and electromagnetic interference (EMI) performance. It is also suitable for use in high-power applications such as switching power converters, automotive, and lighting systems.
The IRFHM8342TRPBF offers a wide range of features, which make it suitable for a variety of applications. These include a highly reliable On-state resistance, which offers excellent performance; low switching times; low capacitance; and a high thermal stability.
The IRFHM8342TRPBF works by using an N-type channel structure. This structure is quickly switched between OFF and ON states in order to control the flow of current. When the voltage at the gate of the transistor is higher than the source voltage, the transistor turns on, allowing current to flow from the drain to the source. When the voltage at the gate of the transistor is less than the source voltage, the transistor turns off, preventing current from flowing from the drain to the source.
The specific data is subject to PDF, and the above content is for reference
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