| Allicdata Part #: | IRFH7194TRPBFTR-ND |
| Manufacturer Part#: |
IRFH7194TRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 11A |
| More Detail: | N-Channel 100V 11A (Ta), 35A (Tc) 3.6W (Ta), 39W (... |
| DataSheet: | IRFH7194TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3.6V @ 50µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.6W (Ta), 39W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 733pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | FASTIRFET™, HEXFET® |
| Rds On (Max) @ Id, Vgs: | 16.4 mOhm @ 21A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 35A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFH7194TRPBF is a high-powered N-channel MOSFET with integrated protection features. The device has a low on-resistance, low gate threshold voltage, and is thermal capable. The IRFH7194TRPBF is available in a variety of package configurations and is suitable for a wide range of applications including automotive, industrial, consumer, and medical.
The IRFH7194TRPBF is available in power dissipation up to 30 watts and has a drain to source voltage rating of up to 100 volts. The device has an input capacitance rating of 4.5pF and a maximum gate charge rating of 57nC. The device has a high frequency (1.8MHz) switching speed, which is ideal for high-frequency applications. The high frequency switching also results in a lower output capacitance rating of only 5pF. This makes the IRFH7194TRPBF suitable for use in AC/DC converter applications.
The IRFH7194TRPBF features an integrated MOSFET gate protection (EMG). This provides ESD protection with rated current levels up to 4A and voltage levels up to 10V. Other integrated protection features include a low current shutdown (less than 10µA) and over-voltage protection. The shutdown feature is also available in a dual output configuration.
The IRFH7194TRPBF is a high-performance N-channel MOSFET and as such can be used in applications where low voltage, high frequency switching is required. Examples of such applications include relay drivers, embedded control, voltage regulators, and state machine applications. The device\'s thermal characteristics makes it suitable for use in higher power applications such as automotive and industrial applications.
The IRFH7194TRPBF operates on a voltage gradient principle and is capable of passing current from the drain to the source when a positive gate voltage is applied. The device consists of three terminals – gate, drain, and source. The gate terminal is used to control the flow of current between the source and drain. A positive voltage applied to the gate causes the MOSFET to turn “ON”, allowing current to flow, while a negative voltage applied to the gate turns “OFF” the MOSFET, preventing current from flowing. Since the device is voltage-controlled, its performance is not affected by the current flow through it.
The IRFH7194TRPBF is an ideal MOSFET for applications where high-frequency switching, low voltage, and low gate charge are required. The integrated MOSFET gate protection and additional protection features make the device suitable for use in wider range of applications. The device\'s thermal and high frequency switching capabilities make it an ideal choice for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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IRFH7194TRPBF Datasheet/PDF