Allicdata Part #: | IRFH5053TRPBFTR-ND |
Manufacturer Part#: |
IRFH5053TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 9.3A PQFN56 |
More Detail: | N-Channel 100V 9.3A (Ta), 46A (Tc) 3.1W (Ta), 8.3W... |
DataSheet: | IRFH5053TRPBF Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 4.9V @ 100µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PQFN (5x6) Single Die |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 8.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1510pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.3A (Ta), 46A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFH5053TRPBF is a predefined N-channel MOSFET. It is a high-performance field effect transistor with an integrated Gate-drain junction. This MOSFET is suitable for the majority of power management applications and its ability to switch on and off fast makes it suitable for a wide range of industrial applications.
The IRFH5053TRPBF is optimized for higher performance compared to a standard MOSFET, offering both a higher-current rating as well as a lower on-resistance. Thanks to its low on-resistance, the IRFH5053TRPBF is suitable for applications requiring a low voltage drop across a load, such as DC to DC converters and high-power motor drive applications. It is also well-suited for other power management applications, such as load switching in batteries and power supplies, as well as voltage and current limiting.
The IRFH5053TRPBF is also capable of switching frequencies up to 2.5 Mhz, making it suitable for high-frequency applications such as radio frequency amplifiers, as well as power factor correction circuits. Additionally, the device can withstand a maximum voltage of 800 volts, making it suitable for many high-voltage applications.
In terms of working principles, the IRFH5053TRPBF is a junction field effect transistor, capable of controlling current flow through a MOSFET’s gate-source junction. When the gate-source voltage is low, the MOSFET is in the OFF state and no current will flow through the gate-drain junction. On the other hand, when the gate-source voltage is sufficiently high, the MOSFET will enter the ON state and current will begin to flow from the drain to the source.
This type of transistor is able to control large currents and voltages, making it ideal for powering powerful electronic components, and its ability to switch quickly makes it ideal for many different applications. Furthermore, the IRFH5053TRPBF offers good thermal performance, low power dissipation, and is RoHS-compliant, making it even more suitable for many different applications.
In conclusion, the IRFH5053TRPBF is an excellent choice for many different power management applications, offering a high current rating, low on-resistance, and fast switching speeds. Its working principle of controlling current flow through a MOSFET’s gate-source junction makes it particularly well-suited for applications requiring high-frequency switching, and its ability to handle large voltages and currents makes it suitable for many different types of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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