IRFH5010TR2PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFH5010TR2PBF is a P-Channel enhancements mode developed by International Rectifier. It belongs to the family of single MOSFETs, which have a gate width of 10 mm and resistance of 2Ω. MOSFETs are designed to switch between two electrical states of on and off. This device has a three-pin package which is smaller than similar devices. It has a voltage rating of 50 V and a maximum drain current of 42 A, offering an excellent balance of small-sized package and high performance.

IRFH5010TR2PBF is widely used in DC-DC conversion and a few other power management applications. It helps in the conversion of DC power from one voltage level to another. Common applications of IRFH5010TR2PBF includes boost converters, buck converters, LED drivers and voltage regulators. Additionally, IRFH5010TR2PBF is also widely used in automotive and commercial applications such as power tools, UPSs, and servers.

The basic principles of how MOSFETs work are metal-oxide semiconductor field-effect transistors. A MOSFET is made up of metal and semiconductor materials. The metal acts as a gate, which is placed above the semiconductor. A sensory element like a capacitance or resistor is connected to the gate. When a source voltage is applied, the metal gate creates a field above the semiconductor, which affects its conductivity. The conductivity can be controlled by varying the strength of the field, which is done by varying the source voltage.

To understand the working of IRFH5010TR2PBF, we must understand its pin configuration. This device has three pins, namely Source (S), Drain (D), and Gate (G). The Source pin is connected to the ground while the Drain pin is connected to the voltage supply. The Gate is connected to the control voltage. When the control voltage is applied to the Gate pin, electrons start flowing from the Source to the Drain, and hence current is supplied.

As a P-Channel MOSFET, IRFH5010TR2PBF has an enhanced body diode characteristics, as compared to other MOSFETs. This property helps to reduce the switching losses especially in applications with high step-down ratios. The high avalanche energy rating and excellent on-state resistance is also beneficial when it comes to low power losses.

In general, IRFH5010TR2PBF is suitable for high power applications such as DC-DC conversion and power management. It offers great performance in terms of size, power handling capability, and cost efficiency. It is a great choice for applications requiring high efficiency and low power losses.

The specific data is subject to PDF, and the above content is for reference