IRFH5301TR2PBF Discrete Semiconductor Products

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IRFH5301TR2PBF is a high-voltage n-channel enhancement-mode silicon-gate power field-effect transistor that is widely used in many sorts of industrial and consumer applications. This transistor features low on-resistance and low threshold voltage, making it suitable for power management in high-side switch-mode regulated supplies and other power switching applications.

The IRFH5301TR2PBF is currently available with an RDS(on) of 4Ω. This makes it ideal for power switches with a smaller size, lower power loss than previously used transistors. The device is rated for a Vds of 100V and an Id up to 8A. It provides a wide range of usability in applications such as high-side switching, DC/DC conversion, and load switch protections. It’s also suitable for automotive applications such as windshield wiper motors, abs brakes and airbag systems.

In terms of its electrical characteristics, the RDS(on) is 4 Ohm and its gate source voltage rating is +/- 20 V. Its short circuit rated current is 6.5 A and its maximum power dissipation is 8 W. Additionally, the device has a gate charge of 9.7 nC typical and a maximum junction temperature of 175°C. In terms of its packaging, it comes in a 3-pin D-PAK.

The IRFH5301TR2PBF use enhanced silicon gate technology to achieve low on-resistance and low threshold voltage in order to provide high efficiency power switching. This transistor features very fast switching speed that ensures fast transition times and reduces the need of using passive components in the system. The device\'s low queuing characteristics ensure smooth control of the output current and device turn-on times when it is used in a multi-switching system.

The IRFH5301TR2PBF\'s Drain-source breakdown voltage of 100V makes it suitable for applications where a high voltage is needed. Its low gate threshold voltage and low input capacitance also allows it to be used in high frequency switching applications. Furthermore, the low maximum on-state resistance helps reduce the conduction losses for improved efficiency in applications where high power is needed and makes it ideal for power management.

In terms of its operating temperature range, the IRFH5301TR2PBF has an operating junction temperature range of -55°C to 175°C. This wide temperature range makes it suitable for a range of applications from commercial to automotive and industrial use. Furthermore, this device can also be used in automotive environments due to its low leakage current and AEC-Q100 qualification.

All in all, the IRFH5301TR2PBF is a high-voltage n-channel enhancement-mode silicon-gate power field-effect transistor is ideal for a range of applications, including automotive, high-side switching, DC/DC conversion, power management and load switch protection. It features low on-resistance and low threshold voltage, fast switching speed and a wide temperature range of -55°C to 175°C.

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