IRFH8201TRPBF

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IRFH8201TRPBF Application Field and Working Principle

The IRFH8201TRPBF is a decent level N-channel enhancement mode power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for applications that require low on-state resistance (RDS_On) and fast switching. The transistor is a voltage-controlled device that uses a gate to control the flow of current from the drain to the source.

Features

• RDS(on) is low
• Low output capacitance
• High speed switching
• Avalanche Energy rated
• Low Miller capacitance
• Lead (Pb)-free plating
• Tin/Silver/Copper (Sn/Ag/Cu) lead-free terminations

Applications

The IRFH8201TRPBF is particularly suitable for working in applications such as; Consumer Electronics, Power Supplies, Automotive Controls, Lighting, Industrial Controls, and Heating. Due to its low on-resistance, it is often used as a switch in DC-DC converters.

Working

The IRFH8201TRPBF is an N-channel enhancement mode MOSFET. When an electric signal is applied to the Gate, a depletion zone is created, which reduces the resistance between the Drain and Source terminals. This leads to a decrease in the VDS (Gate to Source Voltage), thus allowing the flow of current from the drain to the source. The Gate voltage should be provided in the range of -2V to +6V.

The voltage threshold values determine the types of behavior of the MOSFET. A general consensus is that for a low voltage threshold between -2V and +4V, a saturated mode is obtained and for a higher voltage threshold between 4V and 6V, the transistor exhibits an enhancement mode effect.

The MOSFET has three regions: off state, linear state, and saturation state. In the off-state, the voltage is at -2V (Idss) or lower. In the linear state, the current increases linearly with increasing Gate voltage between -2V and +4V. In the saturated state, the voltage should be higher than +4V and no additional current will be gained.

Power Requirements

The Gate-to-Source (Vgs) voltage of the IRFH8201TRPBF should not exceed 6.5V, otherwise the MOSFET may be damaged. The Gate-to-Source leakage current, known as the Gate Leakage Current (Igss), should be kept to a minimum. Most data sheets specify an acceptable range of 4 - 20A, but different manufacturers and devices may have different values.

The power dissipation of the IRFH8201TRPBF should be kept to a minimum in order to avoid overheating. In most cases, it should be below 1W. In case of higher power dissipation, the MOSFET must be mounted on a suitable heatsink. The thermal resistance between the MOSFET and the heatsink should also not exceed 0.1C/W.

Packaging

The IRFH8201TRPBF is available in a TO-220 mounting package. It has three leads which consist of a drain, gate and source. The drain is connected to the high-voltage terminal and should not be subjected to any reverse voltage. The gate is connected to the control voltage and should be kept below the maximum gate voltage specified by the manufacturer. The source is connected to the low-voltage terminal.

The MOSFET should be stored in dry and safe containers, away from direct sunlight and corrosive conditions. The device should be stored in its original packaging, to avoid damage to the components due to moisture and dust. Additionally, the device should be gently handled and the manufacturer’s specified temperature and voltage rating should not be exceeded.

Conclusion

The IRFH8201TRPBF is a decent level N-channel enhancement mode power MOSFET suitable for applications that require low on-state resistance and fast switching. Applications include consumer electronics, power supplies, automotive controls, lighting, industrial controls, and heating. It should be noted that the power dissipation of the IRFH8201TRPBF should be kept to a minimum and that it is available in a TO-220 package. When storing the device, it should be kept in its original packaging and in a clean, dry environment.

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