IRFH5304TR2PBF Discrete Semiconductor Products

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The IRFH5304TR2PBF, part of the IRFH5300 series of Advance Power MOSFETs from International Rectifier, Inc., is designed for use in a wide range of applications. It is a single-channel Power MOSFET designed for high voltage, high speed switching applications in the 50V to 100V range. The channel length of the IRFH5304TR2PBF is optimized for low Rds(on).

Applications of IRFH5304TR2PBF include motor controls, AC and DC switching and controlling, power supply design, motor drive systems, and audio amplifiers. This Power MOSFET is also suitable for use in high frequency switching, as well as protection circuits.

The IRFH5304TR2PBF Power MOSFET has a drain source voltage of 100V, drain current of 2.8A, gate threshold voltage of 1.7V and a maximum operating temperature of 150°C. It also has a maximum associated gate charge of 66.8nC, maximum drain-source on-resistance of 0.223Ω, a drain-source breakdown voltage of 116V and a forward transconductance of 110 S. Its Rds(on) ratio is 5.6V/V.

Working Principle

The IRFH5304TR2PBF Power MOSFET is a voltage-controlled device, meaning that it operates as a switch when a voltage is applied to its gate. When the gate voltage is positive, it is considered to be in an "on" state and the MOSFET is able to conduct current from its source to its drain. When it is in an "off" state, the MOSFET does not conduct current. This makes it possible for the user to control the flow of current simply by changing the voltage of the MOSFET\'s gate.

It should be noted that there is also a source-drain diode present in the Power MOSFET, which can be used for protection against voltage transients. This diode allows current flow in one direction, but not in the other.

The IRFH5304TR2PBF is a power efficient MOSFET, as the drain-source breakdown voltage allows high currents to be handled while the gate threshold voltage ensures low operating power. Additionally, the high transconductance in combination with a low Rds(on) reduces the heat dissipation at the drain.

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