Allicdata Part #: | IRFHP8321TRPBFTR-ND |
Manufacturer Part#: |
IRFHP8321TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 30V 25A POWER 8-SO |
More Detail: | MOSFET 30V 25A POWER 8-SO |
DataSheet: | IRFHP8321TRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | -- |
Technology: | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The IRFHP8321TRPBF is a high-density, Low-Frequency, N-channel enhancement mode Field Effect Transistor (FET) that can be used in a range of applications. This FET can be used in a variety of industries, including audio, telecommunications, automotive, and lighting. It is especially well-suited for audio and power applications where a high-density switch is required.
It is a low voltage device, with an operating voltage range of 3.9V to 5.5V and a max gate insulation voltage of 8V. The gate-source threshold voltage is 1.1V and the gate-drain leakage is less than 10mA. The device also has an on-resistance of 15 mOhms. The device can handle high peak current with a low resistance voltage drop. The device also has a low switching speed of 0.1us.
The IRFHP8321TRPBF FET utilizes the principle of a field-effect transistor in which the electrical properties of the transistor are controlled by an applied electric field. It operates on the principle of controlling the electrical flow between the source and drain terminal by modulating the voltage applied between the gate and source terminals. When a positive voltage is applied between the gate and source terminals, the current flow between the source and drain terminal increases, and the transistor is “on”. Conversely, when a negative voltage is applied between the gate and source terminals, the current flow between the source and drain terminal decreases, and the transistor is “off”.
This FET can be used in a wide range of applications such as switching, audio amplification, power regulation, and logic level conversion. It can also be used in applications requiring charge carrier recombination, such as in light dimmer applications. Additionally, it can be used in low power supply monitoring and on/off switching applications. In audio applications, it can be used in power amplifiers and pre-amplifiers.
The IRFHP8321TRPBF is a robust device which is thermally and voltage-stable, making it highly reliable and suitable for long-term use in different applications. It is also an easy to install device, as it comes with a leaded package and can be easily mounted on a printed circuit (PC).
The IRFHP8321TRPBF is an ideal choice for applications requiring a high-density device with low-frequency operation, such as those in the audio-visual, telecommunications, automotive, and power electronics industries. It provides a robust, reliable, and easy-to-install device with low on-resistance and high peak current handling capability. With its wide range of applications, this high-performance device is well suited for many different applications.
The specific data is subject to PDF, and the above content is for reference
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