Allicdata Part #: | IRFH4234TRPBFTR-ND |
Manufacturer Part#: |
IRFH4234TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 25V 22A PQFN |
More Detail: | N-Channel 25V 22A (Ta) 3.5W (Ta), 27W (Tc) Surface... |
DataSheet: | IRFH4234TRPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 30A |
Vgs(th) (Max) @ Id: | 2.1V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1011pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 3.5W (Ta), 27W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PQFN (5x6) |
Package / Case: | 8-PowerTDFN |
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IRFH4234TRPBF is a single N-channel enhancement-mode field-effect transistor (FET). This component is designed with an advanced pallet process which provides excellent resistive switching performance. Its unique Gate-to-Source capacitance and efficient drain-source on-state characteristic enable the component to be used in a wide range of applications.
The main features of the IRFH4234TRPBF are relatively low-resistance on-state, good frequency response, low leakage current, minimal ringing, and high-impedance cutoff. It has an operating voltage range from 0.6V to 10V and a power rating of up to 50V. The component has an ESD rating of up to 1.2kV and a maximum junction temperature of 175°C.
One of the major applications of the IRFH4234TRPBF is an amplifier in audio systems where the component provides high gain and low distortion. It is also used in switching applications such as gate drive circuits and voltage controlled oscillators. Additionally, it is widely used in automotive, RF and power circuits as a power switch.
The DRFH4234TRPBF is a widely used enhancement-mode power MOSFET transistors because of its excellent switching performance. This component is designed with special materials and advanced process technologies, providing superior thermal and electrical performance. Its gate threshold voltage range is from 0.4V to 3V, making the component suitable for operating in a wide range of applications. The component has an ESD rating of up to 2kV.
The working principle of the IRFH4234TRPBF is fairly simple. When a positive voltage is applied to the Gate terminal, a positive charge is induced on the channel region between the Source and Drain terminals. This charge creates a strong electric field, which attracts electrons from the Drain terminal to the Source terminal, consequently increasing the conductivity between the two terminals. The same process occurs when a negative voltage is applied to the Gate terminal, resulting in the reverse flow of electrons in the channel region and thus reducing the conductivity between the Source and Drain terminals.
This is the basic working principle of the IRFH4234TRPBF, which enables it to be used in a wide variety of ways. As mentioned above, the component is used as an amplifier, gate drive circuit, and voltage controlled oscillator in audio and automotive systems, and in power applications such as power switches and voltage regulators. The component is also used as an interface in integrated circuits due to its low on-resistance.
In conclusion, the IRFH4234TRPBF is a very versatile and reliable component that can be used in a plethora of different applications. Its advanced manufacturing process makes it suitable for use in a wide range of operating voltages, while its robust design ensures that it is reliable and very efficient in all its applications.
The specific data is subject to PDF, and the above content is for reference
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