IRFH4255DTRPBF Discrete Semiconductor Products

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Introduction: IRFH4255DTRPBF is a Field Effect Transistor (FET) that belongs to the Power MOSFET Array family. It is a N-channel enhancement mode MOSFET with a drain-to-source breakdown voltage rating of 28V and a maximum drain current rating of 25A. This device has a single leaded package making it ideal for space-critical applications.

Application Field: IRFH4255DTRPBF can be used for a wide range of applications including power converters, voltage regulators, automotive electronics, power conversion systems, battery-driven electronics, portable equipment, and telecom switching. It is suitable for use in DC-DC converters, switches, and power amplifiers. The device also has a low on-resistance feature which makes it ideal for high frequency DC-DC converters, class-D amplifiers, and power switches.

Working Principle: IRFH4255DTRPBF is a N-channel enhancement mode Power MOSFET Array. It uses a gate-to-source voltage to control the current flow through the device which is regulated by the channel’s resistance. When the gate-to-source voltage is higher than the threshold voltage, the FET begins to conduct current. The FET’s drain-to-source resistance drops as the drain-source current increases. This results in a more efficient use of power and prevents too much current from flowing through the FET.

Conclusion: IRFH4255DTRPBF is a versatile Power MOSFET Array that can be used for a wide range of applications. The device’s low on-resistance feature makes it ideal for high frequency DC-DC converters and power amplifiers. The device is also easy to install due to its single leaded package and allows for efficient power usage.

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