IRFR1010ZTRLPBF

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The IRFR1010ZTRLPBF is a part from a wide range of MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistor) developed by International Rectifier Corporation (IRC). These MOSFETs are designed to meet the demanding requirements of the latest switch mode power supplies, high frequency dc-to-dc converters and other high speed power switching applications in the electronics industry. This particular type is classified as a single power MOSFET Device.

MOSFETs are able to withstand higher temperatures, higher breakdown voltages, and faster switching capabilities than their bipolar counterparts, making them well suited for high power applications. The IRFR1010ZTRLPBF is a kind of power MOSFET specifically designed for extremely high speed and high power electronic applications. This MOSFET is fabricated using a synergy of drain-extended and field-stop technologies, resulting in superior performance levels compared to MOSFETs of similar size and power ratings.

The IRFR1010ZTRLPBF has an abbreviation of 100V from the drain source voltage rating and the current limiting is 10A. The drain source on-state resistance is reported to be 0.011Ω which makes it very versatile as a power electronic component for a numerous of applications. Eventually, the maximum power dissipation is 80W and the junction to ambient thermal resistance is 250°C/W. The typical applications of this device are lighting, timer, security systems, automotive audio, battery charging, motor and actuator control and so on, where the high frequency operation is involved.

The working principle of the IRFR1010ZTRLPBF is based on the MOSFET structure. It is created from the combination of an insulated gate and a n-channel or p-channel FET. The insulation between the Gate and the source provides complete control over a current flow between the drain and source. When a positive voltage is applied across the Gate and the Source, a voltage drop between the drain and the source is created, causing current to flow that is proportional to the amount of voltage applied to the Gate. When a negative voltage is applied to the Gate, the voltage drop is no longer present and the current flow is interrupted, turning off the FET.

In summary, the IRFR1010ZTRLPBF is a high power, single MOSFET device which is able to withstand the demanding requirements of the latest switch mode power supplies, and other high-speed power switching applications. Its extremely low drain source on-state resistance allows for higher frequency and higher power electronic applications. It can be used for a variety of applications including lighting, timer and security systems, automotive audio, battery charging, motor and actuator control, and so on. Its working principle is based on the traditional MOSFET structure of an insulated gate and a n-channel or p-channel FET.

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