Allicdata Part #: | IRFR224TRLPBF-ND |
Manufacturer Part#: |
IRFR224TRLPBF |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 3.8A DPAK |
More Detail: | N-Channel 250V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surfa... |
DataSheet: | IRFR224TRLPBF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.48904 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR224TRLPBF is a low-voltage, low-power, and ultra-fast metal-oxide-semiconductor field-effect transistor (MOSFET). It was initially developed by International Rectifier and is now produced by Vishay Intertechnology. As a power MOSFET, IRFR224TRLPBF provides an outstanding range of performance appropriate for use in a variety of applications, especially in switching applications where space is a major concern.
The IRFR224TRLPBF is a logic level,Enhancement-type power MOSFET, which is categorized as a single N-channel device. This means that it is the most common type of power MOSFET, and it has the following features: low-on resistance, low "gate" capacitance, and low drain-to-source capacitance. The maximum drain-source voltage of the IRFR224TRLPBF is 40V, the drain-gate voltage is 20V, and the gate-source voltage is between 0V and 10V. The forward transconductance (gm) of this device is between 0.7 S and 0.8 S.
The IRFR224TRLPBF is ideal for fast switching applications that require low-power consumption. It is commonly used in electronic systems where low power consumption is a major requirement, such as portable electronic systems (laptops, tablets, and smartphones) and other consumer electronics. Additionally, it is often used in different power management modules, products for home automation, automotive applications, and battery-powered devices.
The IRFR224TRLPBF is a two-terminal device, with the source terminal connected to the negative side of the load, and the drain terminal connected to the positive side of the load. The gate terminal is used to control the current flow between the source and drain terminals. When the voltage applied to the gate is between 0V and 10V, it will turn on the transistor, allowing current to flow. When the voltage is greater than 10V, the transistor will turn off allowing no current to flow.
The working principle of IRFR224TRLPBF is based on the concept of a gate-controlled switch. This is a type of transistor in which a control signal, such as a voltage, is used to modulate the current flow between the source and drain terminals. When a voltage is applied to the gate terminal, it creates an electric field that modulates the current flow between the source and drain terminals. As the voltage applied to the gate increases, the current flow increases, and as the voltage applied to the gate decreases, the current flow decreases.
The IRFR224TRLPBF is an excellent choice for a variety of applications, due to its outstanding performance, low-power consumption, and small size. It is a versatile device that can be used for a variety of purposes, such as in power converters, motor control systems, and as an on/off switch for high-power systems. Additionally, the low-on resistance of the IRFR224TRLPBF makes it a great choice for high-speed switching applications, where power efficiency and low noise are key factors.
The specific data is subject to PDF, and the above content is for reference
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