IRFR9120 Allicdata Electronics
Allicdata Part #:

IRFR9120-ND

Manufacturer Part#:

IRFR9120

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 5.6A DPAK
More Detail: P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surfa...
DataSheet: IRFR9120 datasheetIRFR9120 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF9120 is a type of single n-channel MOSFET transistor which is widely used among many applications. It is highly reliable and able to withstand large electrical currents compared to most other transistors. This device is typically used as a power amplifier, phase control leading to variable frequency operation, audio amplifiers, and various types of power controllers.

The working principle of IRF9120 is to control the flow of current using an electric field. It is constructed in two terminals; one is a gate (G) and the other a Drain (D) or Source (S). The MOSFETs operate using the principle of gate insulation between the gate (G) and drain (D) or source (S). By applying a voltage the resistance between the source and gate terminals can be altered, and the drain current can be controlled.

The resistance between the source and gate terminals is determined by the amount of voltage applied between the gate and source terminals. If there is no voltage applied, or if it is very small, the resistance between the gate and drain and between the gate and source is very high meaning that almost no current flows. On the other hand, if a large voltage is applied, the resistance between the gate and drain and between the gate and source become much lower and more current will flow. This is why it is also known as a voltage controlled device. This means that the IRF9120 can be used as an adjustable current and voltage controlled amplifier.

The IRF9120 is also well known for its ability to handle large amounts of current. The voltage and current capability of this transistor device is impressive and it can handle up to 30 amps of continuous current and 30 volts of continuous voltage. This gives it the ability to handle much higher current than typical bipolar junction transistors or other MOSFETs. It is also able to handle higher transition speeds with very low losses. The switching of the transistor is very fast and it is able to efficiently handle large amounts of load.

The IRF9120 MOSFET is particularly suitable for applications where extremely high current levels need to be controlled, such as in radio transmitter stages, audio amplifiers, power controllers and phase control applications. It is also suitable for applications where the amount of current flowing between two terminals needs to be regulated, such as in switching power supplies and DC-DC converters. With its extended temperature range and fast switching speeds, it is often used in automotive alternators and solenoids. In addition, it is used in a variety of other applications, including flyback converters, solar inverters and power supplies for computers and other electronic equipment.

In summary, the IRF9120 MOSFET is an incredibly useful and versatile transistor with some very impressive features. With its high current capability and its ability to handle high voltage and transition speeds, it is often used in a variety of applications where large amounts of current need to be controlled. It is particularly suitable for audio amplifiers, power controllers, and phase control applications, as well as many other industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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