![IRFR9310PBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRFR9310PBF-ND |
Manufacturer Part#: |
IRFR9310PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 400V 1.8A DPAK |
More Detail: | P-Channel 400V 1.8A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRFR9310PBF can be classified as an N-channel vertical DMOS (double-diffused metal-oxide-semiconductor) transistor. It is a type of metal oxide semiconductor field effect transistor (MOSFET), specifically an n-type enhancement-mode transistor. It is organized as a single transistor housed in a TO-220AB package.
The IRFR9310PBF is characterized by its low on-resistance, high breakdown voltage, high current carrying capacity, and fast switching speed. It is used in applications such as power switching supplies and low voltage switch mode power supplies, DC-DC converters, motor control circuits, transistors, motor drives, and load switching circuits. The IRFR9310PBF can also be used as an amplifier, buffer amplifier, voltage regulator, and noise suppression filters.
The IRFR9310PBF operates at a very low voltage, ranging from 10 volts to 55 volts. Its typical operating current ranges from 0.2 amperes to 4 amperes. The current is limited by the Rds(on) which is the on-resistance of the device. The Rds(on) can range from 0.06 ohms to 0.18 ohms, depending upon the operating voltage. The device can handle up to 152 watts of power dissipation.
The working principle of the IRFR9310PBF is based on the field effect theory. When a voltage is applied to the gate of the MOSFET, it attracts electrons from the N-type semiconductor material, which makes the N-type region electrons. The electrons form a current channel between the source and drain, allowing current to flow from source to drain. Depending on the type of MOSFET, the gate voltage will either increase or decrease the current which then controls the conduction between the source and drain.
The IRFR9310PBF can be utilized in several applications, such as high-efficacy switching power supplies, voltage regulation, as well as buffer amplifiers. Additionally, it has been used in low-noise power line switch mode power supplies and motor control circles to control commutator motors and stepper motors. This device has also been utilized as a boost voltage regulator to improve the speed of load switching circuits and to increase the efficiency of voltage converters.
The IRFR9310PBF is a reliable and efficient device, making it an ideal choice for many applications. Its low on-resistance allows for higher current handling capability, and its fast switching speed gives this device an advantage over other MOSFETs in applications that require a higher switching speed. In addition, its high voltage and current rating make it suitable for a variety of applications where high current, or high voltage needs to be controlled. The IRFR9310PBF is an ideal choice for any applications which require low-noise and low-power usage.
The specific data is subject to PDF, and the above content is for reference
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