IRFR2405PBF

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IRFR2405PBF is a single high-voltage (HV) field-effect transistor (FET) that is suitable for use in power supply, industrial, and telecom applications. This FET is an N-channel lateral MOSFET with a breakdown voltage of up to 400V. It is built with a trench gate oxide and a substrate-drain lateral implant. As a result, the FET has increased on-resistance with high stability and reliability. IRFR2405PBF has a maximum drain current rating of 5A, making it ideal for applications that require higher current capability such as motor control circuits and automotive applications.

The IRFR2405PBF FET is specifically designed for use in high side switch and load switch circuits. Its operating temperature range is -55°C to 150°C and the maximum junction temperature rating is 175°C. This FET also has an on-resistance of 40mW. It has very low gate charge and drain to source capacitance. These low levels of on-resistance and gate charge are beneficial for switching performance and transmission speed.

The device is composed of an N-channel HV MOSFET connected to a substrate-drain lateral implant. The implant can be used to reduce the turn-on voltage and increase the higher breakdown voltage. A dielectric insulator is placed between the drain and the body and the electric fields are confined to the trench gate oxide. The HV FET features high switching performance and the input resistance is generally lower than 10 ohms. There are also two types of lifetime: a simplified Lifetime Model that is based on the maximum drain current and a Complex Lifetime Model that is based on a more detailed analysis.

The working principle of the IRFR2405PBF FET is quite simple. The device consists of a gate (G), drain (D) and source (S) and is operated in the 2-terminal mode for on or off control. The device is operated when a voltage is applied between the gate (G) and source (S). This causes a current to flow from the gate to the source, which turns the device on. When the voltage applied to the gate (G) exceeds the threshold voltage, the FET is activated, allowing current to flow from the drain (D) to the source (S). The current flowing from the drain (D) to the source is regulated by the gate voltage applied to the FET, resulting in a controlled amount of current through the device.

The IRFR2405PBF is suitable for use in a range of applications such as power supplies, motor control circuits, automotive applications, and telecom applications. This FET can also be used in applications such as automotive loads with high current capability, battery chargers, and telecom switches. It has excellent cross-conduction immunity and ESD protection, making it ideal for high-performance and precision applications. Additionally, the FET has very low gate charge and drain to source capacitance and is highly resistant to latch up.

The IRFR2405PBF FET is a high-voltage, high-performance device that is designed for use in a variety of applications. It has a breakdown voltage of up to 400V, an operating temperature range of -55°C to 150°C, and a maximum junction temperature rating of 175°C. The device has very low gate charge and drain to source capacitance levels, making it ideal for switching performance and transmission speed. Additionally, the FET has very high reliability and a lifetime that is both simple to use and highly accurate.

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