IRFR3711TRPBF Allicdata Electronics
Allicdata Part #:

IRFR3711PBFTR-ND

Manufacturer Part#:

IRFR3711TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 100A DPAK
More Detail: N-Channel 20V 100A (Tc) 2.5W (Ta), 120W (Tc) Surfa...
DataSheet: IRFR3711TRPBF datasheetIRFR3711TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFR3711TRPBF is an N-channel enhancement-mode field-effect transistor (FET) which is supplied in PowerPAk M14 package. This device has drain source voltage capability of 30V and a continuous drain source current of 9A. IR are the leading manufacturer of Power MOSFETs and offer almost any power MOSFETs in both standard and custom packages to meet the needs of various applications.

The IRFR3711TRPBF transistor is particularly suitable for use in high frequency DC to DC converters, switching regulators, switching power converters, motor control and general motor drive applications. This device can be used as a load switch, an adjustable current limit circuit and an inverting charge pump circuit. It provides excellent switching speed, low input and low output capacitance. The device has a low Q is effective in eliminating oscillations.

This boost P-channel power MOSFET operates on the basic principle of a field-effect transistor. In the OFF condition, the channel of the transistor is ‘pinched off’ leaving the gate to source voltage at zero V. The low static drain to source on state resistance reduces conduction losses in the output circuit making the device more power efficient. When a voltage is applied to the gate then the channel is opened allowing the current to flow from drain to source.

A feature that makes the IRFR3711TRPBF an ideal choice for many applications is its fast switching speed; it has a fast rise time of 10 ns and a fall time of 8 ns. This makes the device suitable for most applications requiring a high speed of response and excellent thermal impeadance. A further advantage of the device is that it has a low on state resistance (Rds) of 40 mΩ. This makes the device suitable for applications requiring low conduction losses.

The device also has a low gate charge, which is usually measured using pulsed tests. The gate charge is 13 nC and it is the amount of energy that is required to fully activate the device. This allows the device to be used in applications where quick switching and low power dissipation are both important.

The IRFR3711TRPBF also has a high peak current and an avalanche rated current of 160 A. The avalanche rating is an important parameter when designing circuits in which the MOSFET switches at high currents. The device can also be used in high temperature applications, with a maximum operating temperature of 175°C.

To sum up, the IRFR3711TRPBF is an excellent choice for any application requiring a fast switching speed, low on state resistance, low gate charge and high avalanche rated current. It is suitable for use in a wide range of applications, from load switching to motor control and motor drive circuits.

The specific data is subject to PDF, and the above content is for reference

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