Allicdata Part #: | IRFR24N10D-ND |
Manufacturer Part#: |
IRFR24N10D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V DPAK |
More Detail: | N-Channel 100V Surface Mount D-Pak |
DataSheet: | IRFR24N10D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IRFR24N10D is a 10A, 55V, single N-Channel power MOSFET that is commonly used in industrial, automotive, and consumer electronics applications. It is part of the same family as the popular IRF520 MOSFET and is available in the TO-220AB standard power package. This component is designed for high voltage and high current switching applications such as DC motor control, high voltage power supply switching, and high efficiency audio power amplifiers.
The IRFR24N10D is a high-voltage N-channel power MOSFET that has been designed specifically for use in high voltage and high current applications. This device is constructed of a N-type substrate and is capable of generating high power when operating at large currents. This type of device is often used in applications that require the switching of large amounts of power, such as motor control and high voltage power supplies.
The IRFR24N10D has a low on-state resistance (RDS(on)) compared to other power MOSFETs. This low resistance allows for higher current and higher power operations, making the part suitable for high voltage and current applications. In addition, the IRFR24N10D integrates an integrated fast body diode for improved switching performance. The device also has a gate capacitance that helps to reduce ringing across the MOSFET to minimize EMI. Finally, this device is also resistant to electro-static discharges, making it suitable for high-reliability applications.
The IRFR24N10D operates on the principle of voltage control. When a voltage is applied to the gate, the MOSFET will open and allow current to flow through. The current controlled by the voltage is referred to as the gate voltage, which is typically between 5V and 20V. As the voltage is increased, the current flowing through the gate of the MOSFET will also increase. When the gate voltage is reduced, the MOSFET will close and the current will decrease. This makes the IRFR24N10D ideal for applications that require precise control of current. As the gate voltage is decreased, the MOSFET will start to turn on at lower currents, allowing for improved efficiency and power conversion.
The IRFR24N10D has a wide variety of applications due to its performance. It is commonly used in automotive electronics, industrial controls, audio amplifiers, and other high voltage and current applications. The device\'s low on-state resistance, integrated fast body diode, and resistance to electro-static discharges makes the IRFR24N10D a popular choice for these types of applications. Additionally, due to its high current capabilities, it can also be used in high power applications such as DC motor control.
In summary, the IRFR24N10D is a 10A, 55V, single N-Channel power MOSFET. It is designed for high voltage and high current switching applications such as DC motor control, high voltage power supply switching, and audio power amplifiers. The device is relatively low in cost and has a low on-state resistance, fast body diode, and is resistant to electro-static discharges. This versatile device can be found in a variety of high voltage and current applications, such as automotive electronics, industrial controls, and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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