IRFR224BTM_TC002

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IRFR224BTM_TC002 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device developed by International Rectifier (IR). It utilizes advanced trench technology to achieve very low RDS(on) and level of gate charging. It is typically made up of silicon for low gate charge and low on-state resistance. With its high ruggedness and high avalanche capability, IRFR224BTM_TC002 is suitable for use in many different application fields. The transistor is available in a RoHS-compliant PowerPAK SO-8 package offering superior thermal performance and power density.

Application Field

The IRFR224BTM_TC002 MOSFET is mainly used in industrial and commercial applications, including but not limited to: power electronics, motor control, renewable energy, DC-to-DC conversion, power management, oil & gas, automotive, audio, HVAC and many more. Its low on-state resistance can provide an amount of switching mains current which is enough to start big motors and equipment like graphic cards and most computers. Its low gate charge, high breakdown voltage and high switching speed also makes it suitable for audio-amplifier applications, DC-to-DC conversion, motor controllers and modern power supplies. This versatility of the IRFR224BTM_TC002 makes it suitable for a wide range of applications.

Working Principle

The IRFR224BTM_TC002 is an N-Channel enhancement mode MOSFET transistor. It operates on the principle of the three-terminal switching principle. It is an electronic component that is used to control the flow of electrical current by changing its on-state resistance when a voltage or current is applied to its gate terminal. When the voltage is applied to the gate terminal, the electric field forces the electrons from the N-type material to the gate, creating a potential channel between the drain and source. The magnitude of current that is allowed to pass through the channel is determined by the magnitude of voltage at the gate. When the gate voltage is zero, the MOSFET is said to be in the cutoff region, the drain-source impedance is infinite, and no current flows.

When a positive gate voltage is used, the MOSFET enters the active region and a voltage drop exists across the drain and source terminals, allowing a current to flow. The magnitude of the current flow is dependent on the magnitude of gate voltage applied. As the gate voltage increases, the on-state drain-source impedance of the MOSFET decreases, allowing an increased current flow. The IRFR224BTM_TC002 MOSFET also offers lower gate charge, resulting in a faster switching time and lower power consumption.

The IRFR224BTM_TC002 is widely used in a variety of applications because of its low on-state resistance and its ruggedness. This transistor is suitable for a wide range of applications, from high power switching to low power audio-amplifier applications. It offers a low gate charge and a high avalanche capability, making it an ideal choice for a wide range of applications.

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