IRFR9010TRLPBF Allicdata Electronics
Allicdata Part #:

IRFR9010TRLPBF-ND

Manufacturer Part#:

IRFR9010TRLPBF

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 50V 5.3A DPAK
More Detail: P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-P...
DataSheet: IRFR9010TRLPBF datasheetIRFR9010TRLPBF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.44629
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRFR9010TRLPBF is a P-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in a variety of electrical and electronic applications. It is used to control current flow and voltage in circuits, making it a contemporary part of almost all electronic projects today. The IRFR9010TRLPBF is manufactured by International Rectifier and has a VDS ranging from 65V to 100V, an On-Resistance of at most 1.5 Ohms, and a continuous drain current of 100mA with a maximum of 1.2A.

As a MOSFET, the IRFR9010TRLPBF leverages the voltage of an electrical gate to control the flow of current from its source to its drain in a circuit. Accordingly, it can be used as an amplifier, to rapidly switch loads, to protect circuits from short circuits and surges, and for power management, among many other applications. It is also suited for use in analog circuitry as its gain is fixed and can be modulated in-circuit.

In accordance with its N-Channel MOSFET siblings, the IRFR9010TRLPBF is characterized by its gate voltage control, fast switching speed, and low on-resistance characteristics. These factors make it especially suitable to be used in projects such as motor control applications, inverters, DC-DC converters, power factor correction, and audio amplifiers, among other applications.

However, the IRFR9010TRLPBF stands out as one of the more durable P-Channel MOSFETs on the market. This durability is further enhanced by its high thermal resistance which allows the MOSFET to operate at higher temperatures than many of its competitors and with less dissipation power for a given load. Additionally, the IRFR9010TRLPBF has a gate threshold voltage of -4 V and an RDS(ON) of 0.5 ohms, making it suitable for high current and high voltage applications, despite being a P-Channel MOSFET.

The IRFR9010TRLPBF is designed to technologically advanced levels, making it ideal for use in computers, consumer electronics, and power management circuits where accurate control of current flow is needed. In these areas, the IRFR9010TRLPBF proves to be an invaluable asset as its specific characteristics lend themselves perfectly to the applications it is tailored for. Due to its robust construction and the accuracy of its performance, the IRFR9010TRLPBF has gained the favor of many engineers, making it one of the premium choices for discrete power management MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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