IRFR1205PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	107W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	65nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	27 mOhm @ 26A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	44A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRFR1205PBF Application Field and Working Principle

The IRFR1205PBF is one of the most commonly used insulated-gate field-effect transistor (IGFET) devices. It is used in a variety of applications, including power control, signal switching, and current sensing. The IRFR1205PBF is a high-voltage, low-on-state-resistance, advanced process N-channel MOSFET that can switch up to 60V and provide up to 27A of output current.The IRFR1205PBF is a versatile and easy-to-use device that provides excellent performance in a wide range of applications. It has many advantages over bipolar junction transistors (BJTs) and other FETs in terms of power efficiency, switching speed, and heat dissipation. The device features an adjustable threshold voltage, allowing for precise adjustment of the conduction characteristics of the device.The working principle of the IRFR1205PBF is based on the field-effect principle. It is a three-terminal device with one Gate, one Source and one Drain terminal. The gate of the transistor is used to control the current flow between the source and the drain.The Gate terminal is used to turn the transistor on and off. When the Gate voltage is high, electrons are attracted, and a low-resistance channel is created between the source and drain, allowing a current to flow. When the Gate voltage is low, electrons are repelled, and the channel closes, preventing current flow.The principle of operation of the source and the drain is based on the electron tunnel effect. When a Gate voltage is applied, it causes the electrons to tunnel through the insulation of the substrate and the junction region, forming a low-resistance channel.The primary application for the IRFR1205PBF is in power switching. It is used in high-voltage applications such as motor control, AC and DC power supplies, and power conversion. Because of its high current capability and low on-state resistance, the device is suitable for use in high-power applications such as DC-DC converters and power amplifiers.The device’s high switching speed and low input capacitance make it well-suited for high-frequency applications such as radio-frequency (RF) switching. Because of its low input capacitance and conductance, the device is also well-suited for MOSFET-derived logic gates such as pulse-width modulation (PWM) blocks and digital electronics.In summary, the IRFR1205PBF is a versatile and easy-to-use IGFET device that provides numerous benefits and performance advantages over conventional transistors. It is used in a variety of applications, including power control, signal switching, and current sensing. The device benefits from its high voltage and low-on-state resistance, adjustable threshold voltage, and high switching speed with low input capacitance.

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