IRFR2307ZPBF Allicdata Electronics
Allicdata Part #:

IRFR2307ZPBF-ND

Manufacturer Part#:

IRFR2307ZPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 75V 42A DPAK
More Detail: N-Channel 75V 42A (Tc) 110W (Tc) Surface Mount D-P...
DataSheet: IRFR2307ZPBF datasheetIRFR2307ZPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 100µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRFR2307ZPBF is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is manufactured in International Rectifier Corp’s Power Products, and is used in a variety of power switching applications. This MOSFET is based on a dual-type N-Channel vertical structure, an on-chip gate-to-source level shifter, and built-in protectors. All these features make the IRFR2307ZPBF suitable for high-side and low-side switching in application circuits that require voltages of up to 500V.

The IRFR2307ZPBF MOSFET is a three terminal device with the source (S), gate (G) and drain (D) terminals.The source is connected to the N-type drain and to the source of the load. The gate is connected to the gate drive circuit, which is either a microcontroller or an effective circuit connected to a power supply. The drain is connected to the load itself and to the source of the configured transistor.

When a positive voltage is applied to the gate, it creates a large electric field between the gate and the source. This reduces the resistance between the drain and the source, allowing current to flow. This is known as the enhancement mode of the device. A negative voltage applied to the gate will reduce the electric field, increasing the resistance and effectively shutting off current flow. This is known as the depletion mode.

The IRFR2307ZPBF has various uses in power supply applications. Its high-current carrying capacity makes it suitable for use in PFCs, regenerative braking circuits, LED drivers, and DC-DC converters. It is also able to operate as a gate drive in motor control circuits and UPS systems. Its high-voltage rating makes it suitable for use in these applications when the system voltage exceeds 500V.

Aside from its high-current and high-voltage capabilities, the IRFR2307ZPBF also provides overvoltage and overtemperature protection. It also supports both Synchronous and Asynchronous gate drive, making it compatible with various gate drive circuits. It also features low gate charge and low gate resistance, providing fast switching and high power efficiency.

To summarize, the IRFR2307ZPBF is a type of MOSFET which is suitable for high current and high voltage applications. It has a dual type N-Channel vertical structure, on-chip gate-to-source level shifter, and built-in protectors. It is used in power switching applications such as PFCs, regenerative braking circuits, LED drivers, DC-DC converters, motor control circuits, and UPS systems. It can also provide overvoltage and overtemperature protection, Synchronous and Asynchronous gate drive, low gate charge, and low gate resistance.

The specific data is subject to PDF, and the above content is for reference

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