IRFR3504TRPBF Allicdata Electronics
Allicdata Part #:

IRFR3504TRPBFTR-ND

Manufacturer Part#:

IRFR3504TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 30A DPAK
More Detail: N-Channel 40V 30A (Tc) 140W (Tc) Surface Mount D-P...
DataSheet: IRFR3504TRPBF datasheetIRFR3504TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF3504TRPBF is a MOSFET transistor that belongs to the single category. It is widely used in many applications due to its specific characteristics, such as low level voltage, high speed switching, and low on-resistance. As a single MOSFET transistor, it is useful for many applications because of the combination of their small size, low power consumption, and high gain.

The main application fields of the IRF3504TRPBF are switching, audio amplification, and data communications. In switching applications, the low on-resistance is the essential element for power efficiency. The low on-resistance combined with the ability to operate at voltages up to 20V DC make the IRF3504TRPBF device especially suitable for switching purposes that involve DC and/or AC signals. As an audio application, this MOSFET transistor takes advantage of its low on-resistance and fast switching speed to produce high quality audio amplification. In data communication applications, this MOSFET can provide reliable signal reception or transmission, depending on the application. Additionally, it is very efficient at low voltages and its immunity against electrical noise can be exploited to further reduce power consumption.

The working principle of the IRF3504TRPBF MOSFET transistor can be described as a source-to-drain current flow with gate voltage control. The gate voltage is the key factor in controlling the flow of current, since it influences the size of the electrical field applied to the transistor’s channel. A positive gate voltage will open the channel, enabling current to flow from the source to the drain, while a negative voltage will close the channel, preventing a flow of current.

When the gate voltage of a MOSFET device is transitioned from high to low, the resulting current is smoothed by the device’s internal capacitance. This property can be used to reduce power consumption and noise, since the electrical field applied to the device’s channel is reduced. As the gate voltage increases, the device can be made to switch faster, allowing for higher speed transistors or switches.

The IRF3504TRPBF is a versatile and efficient MOSFET transistor that can be used in a variety of applications. Its low level voltage, high speed switching, and low on-resistance make it a great choice for switching devices, audio amplifiers, and data communications. Additionally, its internal capacitance allows it to be used in applications that require faster switching or low power consumption.

The specific data is subject to PDF, and the above content is for reference

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