Allicdata Part #: | IRFR3704ZPBF-ND |
Manufacturer Part#: |
IRFR3704ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 60A DPAK |
More Detail: | N-Channel 20V 60A (Tc) 48W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3704ZPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8.4 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IRFR3704ZPBF is a big MOSFET in the form of single transistor. It is highly applicable in various fields due to its high voltage strength, low capacitance and high switching capability.
The electrical characteristics of IRFR3704ZPBF are quite remarkable in terms of its drain-source breakdown voltage, which is 470 V, gate-source breakdown voltage at +/-20 V, N-channel Drain current, which is 44 A, effective capacitance of typical Ciss is our times lower than the standard equivalent, and low rds(on) of 6.2 mohm.
The application fields of IRFR3704ZPBF are rich and it is used in numerous sectors such as automotive, industrial, and lighting, personal electronics and portable audio systems, medical equipment, computer and Telecoms equipment, power management and conversion, military and space applications as well as robots.
Moreover, the IRFR3704ZPBF is suitable for high current, low voltage applications such as 12V automotive systems, and DC-DC circuit applications. Furthermore, it is generally used in compact boards, professional switching and high-end switching applications.
Working Principle of IRFR3704ZPBF
The working principle of IRFR3704ZPBF is based on the concept of MOSFET or Metal-Oxide Semiconductor Field-Effect Transistor. In simple words, it is a device that controls the flow of current through the use of a voltage applied to the gate terminal. It consists of a source and a drain, which are separated by a channel. The current flow through the channel will be determined by a voltage applied to the gate.
When a positive voltage is applied to the gate terminal, the electric field produced will cause electrons to be attracted to the gate region. This will cause a depletion region to form in the channel, resulting in a reduction in the current flow across the channel. In contrast, when a negative voltage is applied to the gate terminal, the electric field will push the electrons away from the gate region and hence, increase the current across the channel.
This way, by controlling the voltage applied to the gate terminal, one can control the current flow across the MOSFET, making it extremely useful for many applications. Along with IRFR3704ZPBF, there are many other MOSFETs available, each of which has its own set of characteristics and applications.
The specific data is subject to PDF, and the above content is for reference
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