Allicdata Part #: | IRFR3704ZTRL-ND |
Manufacturer Part#: |
IRFR3704ZTRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 60A DPAK |
More Detail: | N-Channel 20V 60A (Tc) 48W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3704ZTRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 8.4 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFR3704ZTRL is an advanced, high-performance Enhancement Mode MOSFET. It is designed for high-frequency, high-power-density applications and is offered in an easy-to-use package. It features low gate charge and low Rds(on) with fast switching, high-current and low-voltage operation.
The IRFR3704ZTRL can be used in a wide range of designs, including automotive, lighting, and high-power-density DC-DC converters. It is capable of providing very high performance in a wide range of switching, control and drive applications.
The IRFR3704ZTRL is designed for a wide range of devices such as load switches, high-side switches, low-side switches, gate drivers and MOSFETs for motor drive circuits. It is also used as a replacement for standard P-channel MOSFETs in many designs.
The IRFR3704ZTRL employs a high-density cell structure, which allows for high-speed operation with low gate charge. It also features low on-resistance and high-speed switching. The low-threshold voltage makes it ideal for low-voltage operation.
The working principle of the IRFR3704ZTRL is based on the electro-static field effect, which is produced when a voltage is applied across its gate and source terminals. This causes the gate to become positively charged, and the source to become negatively charged. This produces an inversion layer, which allows current to flow through the channel between the source and drain terminals.
The IRFR3704ZTRL can be operated in either enhancement-mode or depletion-mode operation. In enhancement mode, a logic-high voltage on the gate terminal turns the device ON, whereas in depletion-mode a low voltage on the gate turns the device ON. The channel resistance (Rds) of the device can be modulated by controlling the gate voltage.
The IRFR3704ZTRL is well-suited to applications such as automotive lighting, high-power-density DC-DC converters, load switches, high-frequency control, gate drivers, and motor drive circuits. It features low gate charge, low on-resistance, fast switching and low-voltage operation.
The IRFR3704ZTRL is one of the most reliable and high-performance MOSFETs available, and it\'s perfect for applications requiring powerful switching, control, and drive capabilities. Its wide range of applications makes it an ideal choice for any kind of design.
The specific data is subject to PDF, and the above content is for reference
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