| Allicdata Part #: | IRFR3711ZTRL-ND |
| Manufacturer Part#: |
IRFR3711ZTRL |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 93A DPAK |
| More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa... |
| DataSheet: |  IRFR3711ZTRL Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 79W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRFR3711ZTRL is a silicon N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in switching and high current applications. It is also ideal for use in linear applications and wherever low input capacitance is desired.
The IRFR3711ZTRL is a rugged device designed for high frequency operation and minimal switching losses. It provides excellent thermal stability, fast switching performance and low gate charge for exceptional reliability. This device is suitable for many power switching applications such as switching regulators, solenoid drivers, relay drivers, and start capacitors. It is also ideal for heavy-duty switching of linear applications such as power amplifiers and high frequency switching.
The IRFR3711ZTRL is housed in a thermally-enhanced, low-profile, surface-mount package. Its pinout is optimized to minimize parasitic effects, allowing for faster switching speeds and reduced losses. It has an integrated body diode and a comprehensive feature set, which includes an innovative gate drive architecture, enhanced current focusing, and low Qgd and Qgs, providing superior EMI performance.
The IRFR3711ZTRL utilizes Insulated Gate Bipolar Transistor (IGBT) technology to deliver superior switching performance with very low on-resistance, fast switching rates, and low input capacitance. It also uses advanced dielectric strength modularization for designed-in protection from voltage reversal and surge currents. This device operates from -55°C to +175°C, making it suitable for a wide range of applications.
To summarize, the IRFR3711ZTRL is a versatile, high-performance and thermally-enhanced MOSFET suitable for many applications. It offers superior EMI performance, fast switching performance, low input capacitance and integrated body diode for incredible reliability. This device is perfect for switching regulators, solenoid drivers, and other high-current applications.
The specific data is subject to PDF, and the above content is for reference
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