IRFR4104TRR

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The IRFR4104TRR is a dual field-effect transistor (FET) with high-speed switching capabilities. It is designed to switch high-current and high-voltage applications, such as power switches and signal switching in audio amplifiers and other electronic circuits.

The IRFR4104TRR is a single, complementary FET. It has two dual FETs, each with three terminals: source, gate and drain. These terminals are connected with different inputs and outputs, providing an input signal to the gate and a switched output from the drain.

The IRFR4104TRR is composed of two distinct, complementary FET layers, the p-channel FET layer and the n-channel FET layer. These layers are described by different transfer characteristics, the p-channel having a stronger response to a positive input and the n-channel responding more efficiently to a negative input.

The p-channel FET layer is known as the depletion FET layer, as it is activated when the gate is biased in the opposite direction to the source. When a positive gate voltage is applied, the p-channel FET becomes highly saturated, creating a current flow through the drain that is proportional to the gate voltage.

The n-channel FET layer is referred to as the enhancement FET layer, as it is activated when a positive gate voltage is applied. When positive voltage is applied, the n-channel FET is driven in a turned-on state, creating an open drain current through which an output signal can be switched.

The IRFR4104TRR can be used in high current and high voltage applications, as its dual FET design allows for high-speed switching, along with a low normal operating temperature range. It has been used in applications such as motor control, load switching, audio amplifier design and power control for lamp circuits.

The IRFR4104TRR is an ideal choice for applications requiring fast switching and high current handling capabilities, due to its dual FET construction and low normal operating temperature range. It can be used in a variety of electronics applications, and is suitable for both low voltage and high voltage applications due to its high breakdown voltage of 950 V.

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