IRFR9014TRLPBF Allicdata Electronics
Allicdata Part #:

IRFR9014TRLPBFTR-ND

Manufacturer Part#:

IRFR9014TRLPBF

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 5.1A DPAK
More Detail: P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surfac...
DataSheet: IRFR9014TRLPBF datasheetIRFR9014TRLPBF Datasheet/PDF
Quantity: 3000
3000 +: $ 0.44629
Stock 3000Can Ship Immediately
$ 0.49
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRFR9014TRLPBF is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that belongs to the type of single FETs (Field Effect Transistors). It consists of four pins which are known as the Drain, Source, Gate, and Body pins. It was manufactured by International Rectifier and is used in a variety of applications.

This particular MOSFET can be used in devices such as industrial robots, switched-mode power supplies, and high-frequency switch-mode applications. It is also suitable for repairing or replacing existing devices in applications where a reliable high-performance MOSFET is required. It is also useful for new designs when high-speed switching performance and very low on-resistance is needed. This device is designed for operating in environments with variable power ratings and temperature extremes.

The IRFR9014TRLPBF is packing in an industry standard 8-Lead PowerPAK package type TO-263 that has a total thermal resistance of 45°C/W. It also provides superior thermal management with its very low on-resistance capability and good thermal performance. This device offers excellent results in terms of switching speed, low EMI (electromagnetic interference), and low gate-source voltage drop. It also uses an advanced self-cooling package technology for superior heat dissipation.

The IRFR9014TRLPBF is designed with a N-Channel Enhancement Mode MOSFET structure. It has a Drain to Source voltage rating of 75V and an on-resistance of 12.6 mΩ at 4.5V. It has a maximum Continuous Drain Current rating of 7.2A and an operating temperature range between -55°C to +150°C. The device is also RoHS compliant and has an ESD rating of 2KV.

As far as the working principle of the device goes, the MOSFET works under the action of a voltage applied to the Gate pin. When a positive voltage is applied to the Gate pin, it forms a conductive channel between the Source and Drain pins. This allows current to flow between the two pins and allows the device to be used as a switch. This means that the device can be switched on or off depending on the Gate voltage, enabling it to be used in a wide variety of applications.

In conclusion, the IRFR9014TRLPBF power MOSFET is a reliable and high-performance device with excellent results in terms of switching speed, efficiency, and thermal management. It is suitable for use in a wide range of applications, including industrial robots, switched-mode power supplies, and high-frequency switch-mode applications. Furthermore, the device works effectively when a voltage is applied to the Gate pin, forming a conductive channel between the Source and Drain pins and allowing the device to be used as a switch.

The specific data is subject to PDF, and the above content is for reference

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