| Allicdata Part #: | IRFSL31N20D-ND |
| Manufacturer Part#: |
IRFSL31N20D |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 200V 31A TO-262 |
| More Detail: | N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Throu... |
| DataSheet: | IRFSL31N20D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2370pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 82 mOhm @ 18A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRFSL31N20D is one of the types of metal–oxide–semiconductor field-effect transistors (MOSFETs), which belongs to the single FETs category. It is an N-Channel Enhancement Mode, which means it can be used to amplify noise or enhance signals and can be powered by currents as low as microamperes and nanovolts. It has a low on-state resistance and is thus capable of handling significant surge currents, making it suitable for various high power applications.
The IRFSL31N20D is a vertical MOSFET, meaning its design and layout has been optimised to ensure optimal performance. The low on-state resistance makes it highly efficient, with a lower resistance value than vertical MOSFETs of similar ratings. Furthermore, due to its optimized layout and design, it is able to handle considerably higher power applications than a standard vertical MOSFET.
The IRFSL31N20D also has a very low threshold voltage, which means it can be used to switch signals at voltages as low as 0.5V or even 0.2V. This low threshold voltage combined with its excellent low on-state resistance makes the IRFSL31N20D perfectly suited for a variety of low voltage switching applications, such as portable electronics, automotive and other power converters, and high frequency switch-mode power supplies.
The IRFSL31N20D also features a fast switching speed and low gate charge, making it perfect for high frequency applications. One of the biggest advantages of the IRFSL31N20D is its high-temperature operation capability, meaning it can be used in high temperature environments without risking damage to the device. This makes it ideal for high power applications in industrial and automotive environments.
The working principle of IRFSL31N20D is quite simple. When the gate voltage (VGS) is increased, the resistance between the drain and source (RDSon) decreases and current can flow between the source and drain. This is known as the ‘on’ state of the device, where current can travel from source to drain. If the gate voltage (VGS) is decreased, the RDSon decreases and current can not flow between source and drain. This is known as the ‘off’ state of the device, preventing current from traveling from source to drain.
The IRFSL31N20D is thus an excellent choice for various high power applications, such as portable electronics, automotive and other power converters, and high frequency switch-mode power supplies. Its low on-state resistance and low threshold voltage make it ideal for low voltage switching, while its fast switching speed and low gate charge make it perfect for high frequency applications. Furthermore, its high-temperature operation capability makes it a suitable option for a variety of industrial and automotive environments.
The specific data is subject to PDF, and the above content is for reference
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IRFSL31N20D Datasheet/PDF