IRFSL9N60APBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	170W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1400pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	49nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	750 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.2A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The IRFSL9N60APBF is a high-performance, low-Rate Single-Channel N-Channel Power MOSFET (IRFSL9N60APBF) which is specifically designed for automotive applications. It is a N-Channel MOSFET which is optimized for low on-state resistance, making it suitable for high speed switching applications. This MOSFET has an RDS(ON) of 5.6mΩ and a drain-source voltage (VDS) of 600V.

Application Field

The IRFSL9N60APBF is designed to meet the demanding automotive requirements for efficiency and reliability. It is suitable for a variety of automotive applications, such as DC-DC converters, electronic seat control, brake electronic, electronic compressor drive, and output stages of car audio equipment.The low RDS(ON) of the IRFSL9N60APBF makes it suitable for high-speed switching applications. Its low gate charge allows the device to switch at high frequencies. Furthermore, the Pb-Free package makes it suitable for automotive applications.

Working Principle

The IRFSL9N60APBF is an N-Channel MOSFET that works by controlling the amount of current flowing through a switch using an electric voltage or current. When an electric voltage or current is applied to the MOSFET, the gate of MOSFET is “ON” and current flows through the device. If there is no voltage or current applied, the gate of MOSFET is “OFF” and no current is allowed to flow through the device.The maximum drain current (ID) of the IRFSL9N60APBF is 15A and the drain-source voltage (VDS) is 600V. The threshold voltage of the MOSFET is 0.7V and the gate voltage required to turn “ON” the MOSFET is 5V. The on-analog resistance of the device is 5.6mΩ with a maximum power dissipation of 160W.The IRFSL9N60APBF is a low-voltage, low-power MOSFET suitable for applications such as high-speed switching, DC-DC converters, output stages of car audio equipment, and electronic seat control. The low on-state resistance of the device ensures low power losses at high frequencies.

Conclusion

The IRFSL9N60APBF is a high-performance, low-rate Single-Channel N-Channel Power MOSFET suitable for automotive applications. It is designed to meet the demanding automotive requirements for efficiency and reliability. Its low gate charge and RDS(ON) makes it suitable for high speed switching applications. The device has a maximum drain current of 15A, a drain-source voltage of 600V and an on-analog resistance of 5.6mΩ. This MOSFET is suitable for applications such as DC-DC converters, electronic seat control, brake electronic, electronic compressor drive, and output stages of car audio equipment.

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