IRFS4321PBF

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	350W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4460pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	15 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	85A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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<p>The IRFS4321PBF is a type of single P-channel Field Effect Transistor (FET), commonly used in audio power amplifiers and power supplies. Its intended use is to both switch and regulate current within circuits, with an impressive load-handling capacity of up to 110V with a maximum current of 78A.</p><p>At its core, the IRFS4321PBF comprises a drain, source and gate, much like other types of FETs. An application of an exogenous voltage to the gate terminal helps to control drain-source current, otherwise known as the channel. Therefore, the current travelling through the channel is directly proportional to the gated voltage when the drain-source voltage is held constant.</p><p>Part of what makes the IRFS4321PBF so advantageous is its efficiency. Drain-voltage has a minimal effect on the current flowing through it when the gate-source voltage is set, resulting in a lightly-loaded wastage. Furthermore, unlike FETs with multiple gates, this type only requires a single gate. This allows for greater control, as well as a decreased number of components - thus decreasing the cost of production.</p><p>The IRFS4321PBF is ideal in various applications due to its low input capacitance, noise and on-resistance, some of which include audio power amplifiers and power supplies. With its various advantages, the IRFS4321PBF can be found in a variety of electrical systems.</p><p>The IRFS4321PBF makes use of a variety of working principles in order to control the current flow in and out of circuits. One such working principle is referred to as Body-Tied Source (BTS). This working principle is the result of the gate, drain and source terminals being connected and located close to the body pin, thus creating a common channel in the transistor.</p><p>Another working principle for the IRFS4321PBF is known as the Self-Controlling Source (SCS). This principle relies on the Gate-Source voltage to be adjusted by controlling the voltage on the Source-Drain connections. This produces a level of adaptability, since this voltage can be varied in accordance with the needs of the current circuit.</p><p>The Multi-Source Device (MSD) principle is another working principle of the IRFS4321PBF. MSD works by the gate voltage being applied through multiple source connections in order to provide extended and uniform control to the transistor. This effectively increases the across-the-chip current distribution when compared to other types of FETs.</p><p>The IRFS4321PBF also utilise the principle of Source-Follower Design (SFD). SFD works by the Gate-Source voltage being applied to both the source and gate pins, and then using the amplified voltage to supply the circuit with a high drain voltage. This allows for greater control over the channel, as well as higher accuracy of the current flowing through the channel.</p><p>Due to its features, the IRFS4321PBF is a well-suited for various applications. Audio power amplifiers and power supplies are just some of the areas where the FET can be fully utilised. Voltage regulation and current control is improved due to the various working principles employed by the transistor. Its high voltage and current handling capacity make the IRFS4321PBF a great choice in many applications.</p>

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