Allicdata Part #: | IRFSL3107PBF-ND |
Manufacturer Part#: |
IRFSL3107PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 195A TO262 |
More Detail: | N-Channel 75V 195A (Tc) 370W (Tc) Through Hole TO-... |
DataSheet: | IRFSL3107PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 370W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9370pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 140A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRFSL3107PBF is a P-Channel MOSFET designed for use in a variety of electronic and electrical applications. It is a power MOSFET, meaning that it can be used to control a large amount of current and can handle higher voltages than normal MOSFETs. The IRFSL3107PBF is capable of switching at high frequencies, making it suitable for high-end applications like audio and video systems.
To understand the IRFSL3107PBF application field and working principle, it is necessary to first know that they belong to a class of power components called Field-Effect Transistors (FETs). FETs are transistors that can control the flow of power and direct it to a particular component of an electrical circuit. In particular, the IRFSL3107PBF is a P-Channel MOSFET, which work like switches by controlling the flow of current in an electrical circuit.
In the case of the IRFSL3107PBF, its potential application fields include high-end audio and video systems, as well as electronic computers and PLCs. It can be used in many different power management circuits, such as gate drivers and low-side switches. It can also be used as switches in high-frequency switching applications like switching power supplies and motor drives.
The IRFSL3107PBF working principle is based on the concept of a field-effect transistor or FET. The FET is made up of a source, gate, drain, and bulk terminals. It works by using an electric field to control the flow of current from the source to the drain. The electric field is generated by applying a voltage between the gate and the source. When the voltage is applied to the gate, it produces an electric field, which modulates the current flow from the source to the drain.
When a voltage is applied across the drain and source of an FET, it creates a channel between the two terminals. This channel acts as a switch and allows current to flow from the source to the drain. The IRFSL3107PBF has a high threshold voltage, meaning that it will not be triggered by low voltages. It also has a low gate-source capacitance, making it fast and efficient when used in high-speed switching applications.
The IRFSL3107PBF is also rated to handle very high power because of its high drain-source breakdown voltage. This means that it can handle currents of up to 23A and voltages of up to 100V. This makes it suitable for a variety of applications, including high-speed switching and motor control.
In conclusion, the IRFSL3107PBF is an excellent choice for many power management applications. Its high power handling and switching capabilities make it suitable for use in high-end applications like audio and video systems, as well as electronic computers and PLCs. It is capable of switching at high frequencies and has a low gate-source capacitance, making it fast and efficient in switching applications. With its wide application range and versatile working principle, the IRFSL3107PBF is an excellent choice for many power management applications.
The specific data is subject to PDF, and the above content is for reference
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